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All-optical switching in an asymmetric silicon Fabry–Perot étalon based on the free-carrier plasma effect

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Abstract

We demonstrate all-optical switching at 1.3 and 1.5 μm in the reflection mode of an asymmetric silicon Fabry–Perot étalon by a control beam at 0.85 μm. Both switch-on and switch-off operations are demonstrated at different locations of the etalon. Based on the free-carrier plasma effect, a modulation depth as large as 10% is obtained and a frequency response as high as 0.5 GHz is achieved.

© 1994 Optical Society of America

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