Abstract

The measured photocurrents from two different p-n-junction silicon photodiodes at 170-Å (73-eV) and at 8.34-Å (1480-eV) light are presented. One is a standard extreme-UV photodiode fabricated on low-resistivity silicon (70–100 Ω cm), and the other is fabricated on high-resistivity silicon (>2 × 10⁴ Ω cm). The photocurrents from the diode on high-resistivity silicon are at least an order of magnitude greater than the photocurrents from the diode on low-resistivity silicon when a reverse bias of 40 V is applied to each. This photocurrent enhancement is 15.4 ± 4 at 8.34 Å and 12.5 ± 2 at 170 Å.

© 1995 Optical Society of America

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