Abstract

High-quality, micrometer scale, corner cube arrays were grown on (111) silicon substrates by selective epitaxial growth (SEG) techniques. Sixteen different arrays were produced that had periodic corner spacing ranging from 3 to 50 μm. The arrays were formed by suppressing silicon SEG in a regular geometric pattern, producing the three mutually perpendicular (100) smooth crystal planes. For coherent light of 633-nm wavelength a sharp diffraction pattern of threefold symmetry was observed out to 7 maxima, as well as a retroreflection component.

© 1996 Optical Society of America

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