Abstract

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3‒1.48 μm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10¹⁸−10¹⁵ cm⁻³. The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.

© 1996 Optical Society of America

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