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Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors

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Abstract

New planar GaAs heterojunction bipolar phototransistors have been designed and demonstrated. The devices use a GaAs/Al0.3Ga0.7 As molecular-beam-epitaxy materials system with an Al0.3Ga0.7 As passivated, 10-nm-thick base; a depleted, high–low emitter; and a low emitter-base capacitance. Electrical contact to the emitter is made by a set of parallel, ohmic fingers and to the collector by an ohmic contact formed in a large, ≈1.48-µm deep via. Rise times in response to impulse optical excitation at 810 nm were 747–891 ps except at the two lowest optical excitation powers measured. Photocurrent gains measured at 810 and 850 nm were 0.67–19, depending on experimental conditions. These devices are promising for use in heterodyne photodetector arrays for coherent optical processing channelizers requiring a 100-MHz bandwidth.

© 1997 Optical Society of America

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