Composite infrared bolometers with Si<sub>3</sub>N<sub>4</sub> micromesh absorbers

P. D. Mauskopf; J. J. Bock; H. Del Castillo; W. L. Holzapfel; A. E. Lange

doi:10.1364/AO.36.000765

Applied Optics
Vol. 36,
Issue 4,
pp. 765-771
(1997)
•https://doi.org/10.1364/AO.36.000765

Composite infrared bolometers with Si₃N₄ micromesh absorbers

P. D. Mauskopf, J. J. Bock, H. Del Castillo, W. L. Holzapfel, and A. E. Lange

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P. D. Mauskopf, J. J. Bock, H. Del Castillo, W. L. Holzapfel, and A. E. Lange, "Composite infrared bolometers with Si₃N₄ micromesh absorbers," Appl. Opt. 36, 765-771 (1997)

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Abstract

We report the design and performance of 300-mK composite bolometers that use micromesh absorbers and support structures patterned from thin films of low-stress silicon nitride. The small geometrical filling factor of the micromesh absorber provides 20× reduction in heat capacity and cosmic ray cross section relative to a solid absorber with no loss in IR-absorption efficiency. The support structure is mechanically robust and has a thermal conductance, G < 2 × 10^-11 W/K, which is four times smaller than previously achieved at 300 mK. The temperature rise of the bolometer is measured with a neutron transmutation doped germanium thermistor attached to the absorbing mesh. The dispersion in electrical and thermal parameters of a sample of 12 bolometers optimized for the Sunyaev–Zel’dovich Infrared Experiment is ±7% in R(T), ±5% in optical efficiency, and ±4% in G.

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Mask	g (µm)	2a (µm)	ϕ(mm)	FF (%)	l (mm)	s (µm)	N
A	160	4	2.624	5%	1	5	16
B	60	1.5	2.583	5%	1	5	8
C	60	3	2.520	10%	1	5	8
D	60	3	2.520	10%	0.5	2.5	8
E	60	2	2.604	6.7%	1	5	8
F	400	4	5.656	2%	1	5	8
G	400	4	5.656	2%	1	5	16
H	200	3	5.278	3%	1	5	8
I	solid		2.624	100%	1	5	16
J	solid		5.656	100%	1	5	16

Component	C _ν Electron (J/cc K²)	C _ν Lattice (J/cc K⁴)	Volume (cc)	C (400 mK) (J/K)
Thermistor
Gea	1.9 × 10^-7	3.0 × 10^-6	1.66 × 10^-5	4.52 × 10^-12
Pdb	1.2 × 10^-3	1.1 × 10^-5	2.6 × 10^-9	1.25 × 10^-12
Aub	7.3 × 10^-5	4.2 × 10^-5	5.2 × 10^-8	1.65 × 10^-12
Total				7.42 × 10^-12
Electrical Leads
Cub	9.7 × 10^-5	6.7 × 10^-6	8.75 × 10^-8	3.4 × 10^-12
NbTib	superconducting	4.0 × 10^-6	1.71 × 10^-6	4.5 × 10^-13
Inb	1.15 × 10^-4 (n)	9.58 × 10^-5	1.25 × 10^-7	7.7 × 10^-13
Pbb	1.71 × 10^-4 (n)	1.2 × 10^-4	2.5 × 10^-8	2.0 × 10^-13
Total				4.82 × 10^-12
Absorber
Crb	2.03 × 10^-4	1.19 × 10^-6	3.0 × 10^-9	2.4 × 10^-13
Aub	7.25 × 10^-4	4.23 × 10^-5	1.2 × 10^-8	3.0 × 10^-13
Si₃N₄ c	*	*	2.5 × 10^-7	1.0 × 10^-14
Total				5.5 × 10^-13
Heat Capacity of Thermistor + Leads				1.3 × 10^-11

H Web	300 mK	100 mK
G _absorber (W/K)	6.0 × 10^-11	1.4 × 10^-11
G _supports (W/K)	≤2 × 10^-11	≤1.0 × 10^-12
τ_therm (µs)	250	500
G _ctr/G _opt	0.95	0.99

Parameter	Value	Unit	% Disp
T _b	315	mK
R ₀	8.843	Ω	6.31%
Δ	50.388	K	0.75%
G (400 mK)	9.1 × 10^-10	W/K	3.83%
C (400 mK)	1.8 × 10^-11	J/K	11.1%
τ(400 mK)	15.5	ms	14.1%
Voltage Noise	6 × 10^-9	V/ $\sqrt{Hz}$
Responsivity (0 Hz)	7.2 × 10⁷	V/W
NEP (0 Hz)	8.5 × 10^-17	W/ $\sqrt{Hz}$

Mask	g (µm)	2a (µm)	ϕ(mm)	FF (%)	l (mm)	s (µm)	N
A	160	4	2.624	5%	1	5	16
B	60	1.5	2.583	5%	1	5	8
C	60	3	2.520	10%	1	5	8
D	60	3	2.520	10%	0.5	2.5	8
E	60	2	2.604	6.7%	1	5	8
F	400	4	5.656	2%	1	5	8
G	400	4	5.656	2%	1	5	16
H	200	3	5.278	3%	1	5	8
I	solid		2.624	100%	1	5	16
J	solid		5.656	100%	1	5	16

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