Abstract

Existence of a wafer axial dependency in the activation energy (E_a) for the dc-drift of LiNbO₃ modulators has been experimentally found. The E_a for the x-cut modulators is derived to be 0.2~0.5 eV, and 1 eV for the z-cut ones.

© 1998 Optical Society of America

Engineering & Laboratory Notes Hysterisis in DC Bias Drift of LiNbO₃ Optical Modulators

Naoki Mitsugi and Hirotoshi Nagata
Appl. Opt. 35(34) 6831-6832 (1996)

Effect of Aging on Polymerization of a Low Refractive Index Epoxy, Daikin Optodyne UV-1100

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Integrated Optics Pockels Cell—Choice of Crystal Cut and Waveguide Orientation

Farnoosh Rahmatian and Nicolas A. F. Jaeger
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Frequency Swept Measurements of Coherent Diffraction Patterns

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Improved Long-Term DC Drift in OH-Reduced Lithium Niobate Optical Intensity Modulators

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