Daniel B. Sinars,
Guy R. Bennett,
David F. Wenger,
Michael E. Cuneo,
and John L. Porter
D. Sinars (dbsinar@sandia.gov), D. Wenger, M. Cuneo, and J. Porter are with Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1193.
G. Bennett is with Ktech Corporation, 2201 Buena Vista SE, Suite 400, Albuquerque, New Mexico 87106-4265.
Daniel B. Sinars, Guy R. Bennett, David F. Wenger, Michael E. Cuneo, and John L. Porter, "Evaluation of bent-crystal x-ray backlighting and microscopy techniques for the Sandia Z machine," Appl. Opt. 42, 4059-4071 (2003)
X-ray backlighting and microscopy systems for the 1–10-keV range based on spherically or toroidally bent crystals are discussed. These systems are ideal for use on the Sandia Z machine, a megajoule-class x-ray facility. Near-normal-incidence crystal microscopy systems have been shown to be more efficient than pinhole cameras with the same spatial resolution and magnification [Appl. Opt. 37, 1784 (1998)]. We show that high-resolution (≤10 μm) x-ray backlighting systems using bent crystals can be more efficient than analogous point-projection imaging systems. Examples of bent-crystal-backlighting results that demonstrate 10-μm resolution over a 20-mm field of view are presented.
Jeffrey A. Koch, Otto L. Landen, Troy W. Barbee, Peter Celliers, Luiz B. Da Silva, Sharon G. Glendinning, Bruce A. Hammel, Dan H. Kalantar, Charles Brown, John Seely, Guy R. Bennett, and Warren Hsing Appl. Opt. 37(10) 1784-1795 (1998)
Yefim Aglitskiy, Thomas Lehecka, Stephen Obenschain, Stephen Bodner, Carl Pawley, Kent Gerber, John Sethian, Charles M. Brown, John Seely, Uri Feldman, and Glenn Holland Appl. Opt. 37(22) 5253-5261 (1998)
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The Si Heα system will be tested during upcoming experiments, and the Mn Heα system is under consideration for future tests. The Si Heα system used at the Naval Research Laboratory by Aglitskiy9 is shown as System B for comparison.
Ref. 18.
Ref. 19.
Ref. 20.
Table 2
Calculated Results for Point-Projection Backlighting Systems with Parameters Comparable to the Bent-Crystal Backlighting Systems Presented in Table
1
The 50-μm source size is the minimum focal-spot size obtainable with Z-Beamlet. To obtain 10-μm resolution a 12-μm pinhole can be used in front of the source, at a cost of reduced efficiency.
Table 3
Comparison of Selected X-Ray Microscopy Systems Relevant to Sandia’s Z Machinea
Setup A
Setup B
Setup C
Setup D
Setup E
X-ray source parameters
Source emission line
Si Heα
Mn Heα
Cu Kα
Ar Lyβ
Ar Heβ
Source wavelength (Å)
6.65
2.016
1.541
3.151
3.366
Estimated linewidth (Δλline/λ)
1.5 × 10-3
5.0 × 10-4
5.0 × 10-3
5.0 × 10-4
5.0 × 10-4
Imaging hardware parameters
Crystal
Quartz 101̅1
Quartz 224̅3
Quartz 213̅1
Si 311
Ge 311
Reflection order
1
1
2
1
1
Bragg angle (°)
83.9
84.9
88.7
74.2
80.6
Integrated reflectivity (mrad)
1.0
0.078
0.079
0.100
0.350
Crystal bending radius (mm)
250
250
250
250
250
Crystal aperture (mm)
4.3
4.3
4.3
4.4
4.3
System magnification
6
6
6
6
6
Object-to-crystal distance (mm)
145
145
145
145
145
Approximate FOV (mm)
3.5
3.5
3.6
3.3
3.5
Calculated efficiency parameters
Source linewidth (Δλ/λ)
1.3 × 10-3
1.1 × 10-3
2.8 × 10-4
3.2 × 10-3
2.0 × 10-3
ηline
0.87
1.00
0.056
1.00
1.00
Collection solid angle (sr)
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
η
6.2 × 10-2
1.4 × 10-2
2.0 × 10-5
5.7 × 10-2
1.2 × 10-1
I/B
0
(sr)
1.5 × 10-6
3.3 × 10-7
4.8 × 10-10
1.4 × 10-6
2.8 × 10-6
Approximate spatial resolution (μm)
10
10
10
10
10
The data for the integrated reflectivity in setups A–C came from Ref. 18 and the reflectivity for setups D–E came from Ref. 21.
Table 4
Calculated Results for Pinhole-Camera Systems at Four Selected Wavelengthsa
Imaging wavelength (Å)
6.65
2.106
1.541
2.221
Spatial resolution (μm)
23.8
13.3
12.6
13.6
Collection solid angle (sr)
4.8 × 10-9
4.8 × 10-9
4.8 × 10-9
4.8 × 10-9
I/B
0
(sr)
1.3 × 10-10
1.3 × 10-10
1.3 × 10-10
1.3 × 10-10
All systems shown have object-to-pinhole distances of 128 mm, a 10-μm-diameter pinhole, and a system magnification of 6. These choices are analogous to the microscopy systems presented in Table
3. The object-to-pinhole distance was chosen to place the detector ∼900 mm from the object. The spatial resolution was limited in each case by pinhole diffraction effects.
Table 5
Summary of Numerical Ray-Tracing Simulations of the Si Heα Backlighter from Table
1a
Source size
Vertical resolution center (M = 5.78)
Horizontal resolution center (M = 5.98)
Vertical resolution center (M = 5.68)
Horizontal resolution center (M = 5.84)
10-μm test mesh
Point
0.1
0.2
0.5
0.6
100 μm
1.2
0.2
2.8
1.6
500 μm
4.0
0.2
>5
>5
1 mm
4.5
0.2
>5
>5
33.5-μm test mesh
800 μm
4.1
0.2
10.4
5.9
The simulations used the ZEMAX ray-tracing program and treated the crystal as a spherical mirror. The values in the table are in μm and represent the width of the slope from 87.5% of peak intensity to 12.5% peak intensity. Results are given for reflections from the center and from the upper left-hand corner of a 48 mm by 11 mm crystal. Simulation results using 10- and 33.5-μm-wide test meshes are shown. The magnification in each direction is given in parentheses.
Tables (5)
Table 1
Comparison of Several X-Ray Backlighting Systemsa Relevant to Sandia’s Z Machine and the Z-Beamlet Laser
The Si Heα system will be tested during upcoming experiments, and the Mn Heα system is under consideration for future tests. The Si Heα system used at the Naval Research Laboratory by Aglitskiy9 is shown as System B for comparison.
Ref. 18.
Ref. 19.
Ref. 20.
Table 2
Calculated Results for Point-Projection Backlighting Systems with Parameters Comparable to the Bent-Crystal Backlighting Systems Presented in Table
1
The 50-μm source size is the minimum focal-spot size obtainable with Z-Beamlet. To obtain 10-μm resolution a 12-μm pinhole can be used in front of the source, at a cost of reduced efficiency.
Table 3
Comparison of Selected X-Ray Microscopy Systems Relevant to Sandia’s Z Machinea
Setup A
Setup B
Setup C
Setup D
Setup E
X-ray source parameters
Source emission line
Si Heα
Mn Heα
Cu Kα
Ar Lyβ
Ar Heβ
Source wavelength (Å)
6.65
2.016
1.541
3.151
3.366
Estimated linewidth (Δλline/λ)
1.5 × 10-3
5.0 × 10-4
5.0 × 10-3
5.0 × 10-4
5.0 × 10-4
Imaging hardware parameters
Crystal
Quartz 101̅1
Quartz 224̅3
Quartz 213̅1
Si 311
Ge 311
Reflection order
1
1
2
1
1
Bragg angle (°)
83.9
84.9
88.7
74.2
80.6
Integrated reflectivity (mrad)
1.0
0.078
0.079
0.100
0.350
Crystal bending radius (mm)
250
250
250
250
250
Crystal aperture (mm)
4.3
4.3
4.3
4.4
4.3
System magnification
6
6
6
6
6
Object-to-crystal distance (mm)
145
145
145
145
145
Approximate FOV (mm)
3.5
3.5
3.6
3.3
3.5
Calculated efficiency parameters
Source linewidth (Δλ/λ)
1.3 × 10-3
1.1 × 10-3
2.8 × 10-4
3.2 × 10-3
2.0 × 10-3
ηline
0.87
1.00
0.056
1.00
1.00
Collection solid angle (sr)
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
8.6 × 10-4
η
6.2 × 10-2
1.4 × 10-2
2.0 × 10-5
5.7 × 10-2
1.2 × 10-1
I/B
0
(sr)
1.5 × 10-6
3.3 × 10-7
4.8 × 10-10
1.4 × 10-6
2.8 × 10-6
Approximate spatial resolution (μm)
10
10
10
10
10
The data for the integrated reflectivity in setups A–C came from Ref. 18 and the reflectivity for setups D–E came from Ref. 21.
Table 4
Calculated Results for Pinhole-Camera Systems at Four Selected Wavelengthsa
Imaging wavelength (Å)
6.65
2.106
1.541
2.221
Spatial resolution (μm)
23.8
13.3
12.6
13.6
Collection solid angle (sr)
4.8 × 10-9
4.8 × 10-9
4.8 × 10-9
4.8 × 10-9
I/B
0
(sr)
1.3 × 10-10
1.3 × 10-10
1.3 × 10-10
1.3 × 10-10
All systems shown have object-to-pinhole distances of 128 mm, a 10-μm-diameter pinhole, and a system magnification of 6. These choices are analogous to the microscopy systems presented in Table
3. The object-to-pinhole distance was chosen to place the detector ∼900 mm from the object. The spatial resolution was limited in each case by pinhole diffraction effects.
Table 5
Summary of Numerical Ray-Tracing Simulations of the Si Heα Backlighter from Table
1a
Source size
Vertical resolution center (M = 5.78)
Horizontal resolution center (M = 5.98)
Vertical resolution center (M = 5.68)
Horizontal resolution center (M = 5.84)
10-μm test mesh
Point
0.1
0.2
0.5
0.6
100 μm
1.2
0.2
2.8
1.6
500 μm
4.0
0.2
>5
>5
1 mm
4.5
0.2
>5
>5
33.5-μm test mesh
800 μm
4.1
0.2
10.4
5.9
The simulations used the ZEMAX ray-tracing program and treated the crystal as a spherical mirror. The values in the table are in μm and represent the width of the slope from 87.5% of peak intensity to 12.5% peak intensity. Results are given for reflections from the center and from the upper left-hand corner of a 48 mm by 11 mm crystal. Simulation results using 10- and 33.5-μm-wide test meshes are shown. The magnification in each direction is given in parentheses.