Abstract

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at $946\text{\hspace{0.17em} nm}$. With an incident pump power of 9.2 W, the laser produces pulses of $\text{38 ns}$ duration with average pulse energy of as much as $\text{20 μJ}$ at a pulse repetition rate of $\text{55 kHz}$.

© 2007 Optical Society of America

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