Abstract

Based on the direct contact between the wafer and the pad, the pressure and velocity dependence of the material removal rate (MRR) in the fast polishing process (FPP) is investigated. There are three assumptions of the FPP material removal mechanism: the normal distribution of abrasive size, a periodic roughness of the pad surface, and the plastic contact between wafer–abrasive and pad–abrasive interfaces. Based on the particular FPP, a novel movement of the wafer is analyzed and a MRR equation is developed. The experiments with parameters of pressure and velocity are shown to verify the equation. Thus, a better understanding of the fundamental mechanism involved in FPP can be obtained.

© 2008 Optical Society of America

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