Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method

Anna Kaźmierczak-Bałata; Jerzy Bodzenta; Dorota Korte-Kobylińska; Jacek Mazur; Krystyna Gołaszewska; Eliana Kamińska; Anna Piotrowska

doi:10.1364/AO.48.000C74

Applied Optics
Vol. 48,
Issue 7,
pp. C74-C80
(2009)
•https://doi.org/10.1364/AO.48.000C74

Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method

Anna Kaźmierczak-Bałata, Jerzy Bodzenta, Dorota Korte-Kobylińska, Jacek Mazur, Krystyna Gołaszewska, Eliana Kamińska, and Anna Piotrowska

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Anna Kaźmierczak-Bałata, Jerzy Bodzenta, Dorota Korte-Kobylińska, Jacek Mazur, Krystyna Gołaszewska, Eliana Kamińska, and Anna Piotrowska, "Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method," Appl. Opt. 48, C74-C80 (2009)

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The topics in this list come from the Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Thin films (310.0310)
- Antireflection coatings (310.1210)
- Thin films, other properties (310.6870)
- Transparent conductive coatings (310.7005)

About this Article
History
- Original Manuscript: August 5, 2008
- Revised Manuscript: October 13, 2008
- Manuscript Accepted: October 17, 2008
- Published: November 26, 2008

Abstract

A photothermal experiment with mirage detection was used to determine the thermal conductivity of various thin films deposited on semiconductor substrates. The first type consisted of conducting oxide films: ZnO and CdO deposited on GaSb:Te, while the other contained high dielectric constant $Hf O_{2}$ layers on Si. All films were fabricated using a magnetron sputtering technique. Experimental results showed that the value of the thermal conductivity of ZnO and CdO films is lower than the value obtained for $Hf O_{2}$ . Thermal conductivities of investigated thin films are about 2 orders of magnitude lower than those corresponding to bulk materials.

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Substrate	GaSb:Te	GaSb:Te	Si	Si	Si
d, $μm$	470	470	340	340	340
Film	ZnO	CdO	$Hf O_{2}$	$Hf O_{2}$	$Hf O_{2}$
w, nm	375	400	200	200	200
Refractive index	1.81	1.78	2.27	2.76	2.51
Sputter deposition parameters	ZnO target RF, $I_{c} = 160 mA$ $p = 2 \times 10^{- 3} mbar$ $100 % Ar$	Cd target DC, $P = 50 W$ $p = 1 \times 10^{- 2} mbar$ $10 % O_{2} - 90 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $10 % O_{2} - 90 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $20 % O_{2} - 80 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $30 % O_{2} - 70 % O_{2} Ar$

Substrate	GaSb:Te	GaSb:Te	Si	Si	Si
Film	ZnO	CdO	$Hf O_{2}$ ( $10 % O_{2}$ )	$Hf O_{2}$ ( $20 % O_{2}$ )	$Hf O_{2}$ ( $30 % O_{2}$ )
κ, $W / (m \cdot K)$	0.16	0.03	4.69	1.89	3.23

Substrate	GaSb:Te	GaSb:Te	Si	Si	Si
d, $μm$	470	470	340	340	340
Film	ZnO	CdO	$Hf O_{2}$	$Hf O_{2}$	$Hf O_{2}$
w, nm	375	400	200	200	200
Refractive index	1.81	1.78	2.27	2.76	2.51
Sputter deposition parameters	ZnO target RF, $I_{c} = 160 mA$ $p = 2 \times 10^{- 3} mbar$ $100 % Ar$	Cd target DC, $P = 50 W$ $p = 1 \times 10^{- 2} mbar$ $10 % O_{2} - 90 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $10 % O_{2} - 90 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $20 % O_{2} - 80 % O_{2} Ar$	Hf target DC, $P = 100 W$ $p = 6 \times 10^{- 3} mbar$ $30 % O_{2} - 70 % O_{2} Ar$

Substrate	GaSb:Te	GaSb:Te	Si	Si	Si
Film	ZnO	CdO	$Hf O_{2}$ ( $10 % O_{2}$ )	$Hf O_{2}$ ( $20 % O_{2}$ )	$Hf O_{2}$ ( $30 % O_{2}$ )
κ, $W / (m \cdot K)$	0.16	0.03	4.69	1.89	3.23

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