Pattern effect reduction in all-optical wavelength conversion using a two-electrode semiconductor optical amplifier

Peng Tian; Lirong Huang; Wei Hong; Dexiu Huang

doi:10.1364/AO.49.005005

Applied Optics
Vol. 49,
Issue 26,
pp. 5005-5012
(2010)
•https://doi.org/10.1364/AO.49.005005

Pattern effect reduction in all-optical wavelength conversion using a two-electrode semiconductor optical amplifier

Peng Tian, Lirong Huang, Wei Hong, and Dexiu Huang

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Peng Tian, Lirong Huang, Wei Hong, and Dexiu Huang, "Pattern effect reduction in all-optical wavelength conversion using a two-electrode semiconductor optical amplifier," Appl. Opt. 49, 5005-5012 (2010)

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Related Topics
Table of Contents Category
- Optical Devices
Optics & Photonics Topics
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The topics in this list come from the Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Optical communications (060.4510)
- Wavelength conversion devices (230.7405)
- Semiconductor optical amplifiers (250.5980)

About this Article
History
- Original Manuscript: April 20, 2010
- Revised Manuscript: July 28, 2010
- Manuscript Accepted: July 30, 2010
- Published: September 9, 2010

Abstract

A two-electrode semiconductor optical amplifier that has two sections and two separated electrodes is proposed for an all-optical wavelength converter. Pattern effect reduction based on dynamic gain compensation is theoretically investigated using a time-domain model that takes into account the carrier diffusion process between the two sections, and the Q factor of the converted light is calculated to evaluate pattern effects. Simulation results show that the Q factor is greatly improved when the section lengths and the currents are appropriately selected.

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Symbol	Description	Value and Unit
d	Active region thickness	$0.15 μm$
w	Active region width	$2 μm$
$n_{eq}$	Equivalent refractive index of active region	3.22 [18]
M	Segment number	100
R	Residual facet reflectivity	$5 \times 10^{- 5}$ [18]
Γ	Optical confinement factor	0.45 [18]
D	Diffusion coefficient	$8 \times 10^{- 4} m^{2} s^{- 1}$ [22]
$τ_{diff}$	Diffusion time	$1.33 \times 10^{- 9} s$ [22]
$A_{rad}$	Linear radiative recombination coefficient	$1.0 \times 10^{7} s^{- 1}$ [18]
$A_{nrad}$	Linear nonradiative recombination coefficient	$3.5 \times 10^{8} s^{- 1}$ [18]
$B_{rad}$	Bimolecular radiative recombination coefficient	$5.6 \times 10^{- 16} m^{3} s^{- 1}$ [18]
$C_{aug}$	Auger recombination coefficient	$3.0 \times 10^{- 41} m^{6} s^{- 1}$ [18]
$m_{e}$	Effective mass of electron	$4.10 \times 10^{- 32} kg$ [18]
$m_{h h}$	Effective mass of heavy hole	$4.19 \times 10^{- 31} kg$ [18]
ε	Gain compression factor	$2.6 \times 10^{- 23} m^{3}$ [20]
$K_{0}$	Carrier independent absorption loss coefficient	$6200 m^{- 1}$ [18]
$K_{1}$	Carrier dependent absorption loss coefficient	$7.5 \times 10^{- 21} m^{2}$ [23]

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