Abstract

Extended blue and standard transmission-mode GaAs photocathode modules were prepared, respectively, by metal organic chemical vapor deposition. The experimental reflectivity, transmissivity, and spectral response curves were measured and compared separately. The integral sensitivities are $1980\mathrm{\mu A}/\mathrm{lm}$ and $2022\mathrm{\mu A}/\mathrm{lm}$ for both the modules. By use of the revised quantum yield formula, the experimental spectral response curves are fitted to obtain the structure parameters. The fitted results show that the ${\mathrm{Ga}}_{1-x}{\mathrm{Al}}_x\mathrm{As}$ window layer with varied aluminum components is beneficial to improve extended blue GaAs photocathode module. In addition, the layer-thickness and aluminum component in the window layer determine the extended blue performance, while the thickness of the GaAs active layer settles the long-waveband performance for the transmission-mode GaAs photocathode module.

© 2011 Optical Society of America

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