Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlO<sub>x</sub>N<sub>y</sub> thin films

Sheng-Hui Chen; Chun-Che Hsu; Hsuan-Wen Wang; Chi-Li Yeh; Shao-Ze Tseng; Hung-Ju Lin; Cheng-Chung Lee; Cheng-Yu Peng

doi:10.1364/AO.50.00C392

Applied Optics
Vol. 50,
Issue 9,
pp. C392-C395
(2011)
•https://doi.org/10.1364/AO.50.00C392

Improvement of silicon solar cell efficiency by ion beam sputtered deposition of ${AlO}_{x} N_{y}$ thin films

Sheng-Hui Chen, Chun-Che Hsu, Hsuan-Wen Wang, Chi-Li Yeh, Shao-Ze Tseng, Hung-Ju Lin, Cheng-Chung Lee, and Cheng-Yu Peng

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Sheng-Hui Chen, Chun-Che Hsu, Hsuan-Wen Wang, Chi-Li Yeh, Shao-Ze Tseng, Hung-Ju Lin, Cheng-Chung Lee, and Cheng-Yu Peng, "Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlO_xN_y thin films," Appl. Opt. 50, C392-C395 (2011)

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Negative charge material, ${AlO}_{x} N_{y}$ , has been fabricated to passivate the surface of p-type silicon. The fabrication of ${AlO}_{x} N_{y}$ was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from $10^{11} {cm}^{- 2}$ to $2.26 \times 10^{12} {cm}^{- 2}$ after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from $1 \times 10^{5}$ to 32 cm/s.

Full Article | PDF Article

More Like This

Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra
Appl. Opt. 44(29) 6186-6192 (2005)

Spectroscopic ellipsometry studies on various zinc oxide films deposited by ion beam sputtering at room temperature

Jin-Cherng Hsu, Yung-Hsin Lin, Paul W. Wang, and Yu-Yun Chen
Appl. Opt. 51(9) 1209-1215 (2012)

TiO₂-Ta₂O₅ composite thin films deposited by radio frequency ion-beam sputtering

Cheng-Chung Lee and Chien-Jen Tang
Appl. Opt. 45(36) 9125-9131 (2006)

Previous Article Next Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (5)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Tables (3)

You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Equations (2)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Process parameter	$C_{ox}$ ( $\times 10^{- 11} F$ )	$ε_{r}$	$V_{FB}$ (V)	$Q_{F}$ ( ${cm}^{- 2}$ )
Before annealing	1.544	6.98	$- 0.44$	$- 3.65 \times 10^{11}$
Annealing: $600 ° C$ in $O_{2}$	1.579	7.14	0.99	$- 1.71 \times 10^{12}$

$N_{2}$ flow rate (sccm)	$C_{ox}$ ( $\times 10^{- 11} F$ )	$ε_{r}$	$V_{FB}$ (V)	$Q_{F}$ ( ${cm}^{- 2}$ )
5.28	2.069	9.35	1.01	$- 2.26 \times 10^{12}$
10.56	1.579	7.14	0.99	$- 1.71 \times 10^{12}$
21.12	1.221	5.5	0.98	$- 1.32 \times 10^{12}$

Passivation	$Q_{f}$ ( ${cm}^{- 2}$ )	Equivalent recombination velocity ( $cm / s$ )	$V_{OC}$ (mV)	$I_{SC}$ (mA)	Efficiency (%)
Without passivation	0	$1 \times 10^{5}$	612.0	31.3	15.9
With ${AlO}_{x} N_{y}$ passivation	$- 2.26 \times 10^{12}$	32	633.0	32.7	17.3
With perfect passivation	$- 1 \times 10^{13}$	5	634.2	32.8	17.4

Process parameter	$C_{ox}$ ( $\times 10^{- 11} F$ )	$ε_{r}$	$V_{FB}$ (V)	$Q_{F}$ ( ${cm}^{- 2}$ )
Before annealing	1.544	6.98	$- 0.44$	$- 3.65 \times 10^{11}$
Annealing: $600 ° C$ in $O_{2}$	1.579	7.14	0.99	$- 1.71 \times 10^{12}$

$N_{2}$ flow rate (sccm)	$C_{ox}$ ( $\times 10^{- 11} F$ )	$ε_{r}$	$V_{FB}$ (V)	$Q_{F}$ ( ${cm}^{- 2}$ )
5.28	2.069	9.35	1.01	$- 2.26 \times 10^{12}$
10.56	1.579	7.14	0.99	$- 1.71 \times 10^{12}$
21.12	1.221	5.5	0.98	$- 1.32 \times 10^{12}$

Abstract

Cited By

Figures (5)

Tables (3)

Equations (2)

Applied Optics