Abstract

We use the LOCal oxidation of silicon (LOCOS) method as a fabrication technique to define submicrometer photonic waveguides. We attempted fabricating the wire waveguides with two different masking processes, one with a stack of pad oxide and silicon nitride layers, and the other with a single silicon nitride layer. The smallest waveguide we achieved had a cross-section profile of $280\mathrm{nm}\times 650\mathrm{nm}$. The propagation loss of the waveguides was measured by the cut-back method, and the bending loss was measured by employing the serpentine pattern. The minimum propagation loss achieved was $8.78\mathrm{dB}/\mathrm{cm}$ and the bending loss was $0.0089\mathrm{dB}/90°$ bend for a 5 μm bending radius.

© 2012 Optical Society of America

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