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Compact stabilized semiconductor laser for frequency metrology

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Abstract

We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high-quality-factor whispering-gallery-mode microresonator. The laser is characterized by residual amplitude modulation below 80dB and frequency noise better than 300Hz/Hz1/2 at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to the Doppler-free saturated absorption resonance of the Rb87 D1 line is demonstrated and relative frequency stability better than 1012 is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for the realization of frequency modulatable lasers at any wavelength.

© 2015 Optical Society of America

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