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Broadband high-reflective distributed Bragg reflectors based on amorphous silicon films for semiconductor laser facet coatings

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Abstract

We fabricated amorphous silicon (a-Si)-based distributed Bragg reflectors (DBRs) consisting of alternating dense/porous films (i.e., pair) for a center wavelength (λc) of 0.96 μm by oblique angle deposition (OAD) technique using an electron-beam evaporation system. The dense (high refractive index, i.e., high-n) and porous (low-n) a-Si films were deposited at two incident vapor flux angles of 0° and 80° in the OAD, respectively. Their optical reflectance characteristics were investigated in the wavelength range of 0.6–1.5 μm, including theoretical comparison using a rigorous coupled-wave analysis method. Above three pairs, the reflectivity (R) of a-Si DBRs was almost saturated at wavelengths around 0.96 μm, exhibiting R values of >97%. For the a-Si DBR with only three pairs, a broad normalized stop bandwidth (Δλ/λc) of 22.5% was obtained at wavelengths of 0.871.085μm, keeping high R values of >95%. To simply demonstrate the feasibility of device applications, the a-Si DBR with three pairs was coated as a high-reflection layer at the rear facet of GaAs/InGaAs quantum-well laser diodes (LDs) operating at λ=0.96μm. For the LDs coated with three-pair a-Si DBR, external differential quantum efficiency (ηd) was nearly doubled compared to the uncoated LDs, indicating the ηd value of 50.6% (i.e., ηd25.5% for the uncoated LDs).

© 2015 Optical Society of America

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