Abstract

The 1.53 μm gain characteristics of ${\mathrm{Er}}_x\mathrm{Yb}{(\mathrm{Y})}_{2-x}{\mathrm{SiO}}_5$ nanowire and film material waveguide amplifiers have been investigated considering the upconversion effect by solving rate equations and propagation equations. The gains of ${\mathrm{Er}}_x\mathrm{Yb}{(\mathrm{Y})}_{2-x}{\mathrm{SiO}}_5$ nanowire waveguides have a significant enhancement compared with those of film material waveguides due to low propagation loss and long photoluminescence lifetime. The cooperative upconversion (CUC) effect plays a significant role in the simulation. The maximum 27 dB/mm gain for a 1 mm length ${\mathrm{Er}}_x\mathrm{Yb}{(\mathrm{Y})}_{2-x}{\mathrm{SiO}}_5$ nanowire waveguide was obtained without CUC, and only about 2 dB/mm gain was obtained with CUC. However, the low thresholds of 10.7 and 0.7 mW, respectively, for the ${\mathrm{Er}}_x{\mathrm{Y}}_{2-x}{\mathrm{SiO}}_5$ and ${\mathrm{Er}}_x{\mathrm{Yb}}_{2-x}{\mathrm{SiO}}_5$ nanowire waveguides amplifiers were observed with CUC by analyzing the relation between optical gain and the Er/Yb/Y concentration, waveguide length, waveguide cross section area, energy-level lifetime, and pumping power coefficients. The low threshold is two to three orders of magnitude lower than the threshold used in thin film experiments.

© 2015 Optical Society of America

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