Abstract
A diode-pumped microchip laser passively -switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a -switching conversion efficiency of 58%. The pulse characteristics were at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively -switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.
© 2016 Optical Society of America
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