Abstract
We report the experimental fabrication and testing of a GeSn-based image sensor focal plane array operating at in the 1.6–1.9 μm spectral range. For image readout, the 2D pixel array of Ge/GeSn/Ge heterophotodiodes was flip-chip bonded to a customized silicon CMOS readout integrated circuit. The resulting camera chip was operated using back-side illumination. Successful imaging of a tungsten-filament light bulb was attained with observation of gray-scale “hot spot” infrared features not seen using a visible-light camera. The Ge wafer used in the present imaging array will be replaced in future tests by a germanium-on-silicon wafer offering thin-film Ge upon Si or on . This is expected to increase the infrared responsivity obtained in back-side illumination, and it will allow an imager in a Si-based foundry to be manufactured. Our experiments are a significant step toward the realization of group IV near-mid-infrared imaging systems, such as those for night vision.
© 2016 Optical Society of America
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