Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode

Not Accessible

Your library or personal account may give you access

Abstract

We investigate the effect of temperature on the single-photon properties of four germanium/silicon (Ge/Si) single-photon avalanche photodiodes (SPADs), which are fabricated by Ge-on-Si direct epitaxial growth, Ge-on-Si two-step epitaxial growth, Ge/Si direct wafer bonding, and Si/Si hydrophobic bonding, respectively. It is found that the wafer-bonded Ge/Si SPAD exhibits extremely low dark current and dark count rate (DCR) compared with the epitaxial ones at 250 and 300 K. This implies that the wafer-bonding technique is a possible candidate for the fabrication of Ge/Si SPAD, which can be operated at near room temperature. Additionally, due to the low DCR and high operation temperature, the wafer-bonded Ge/Si SPAD shows extremely high pulse repetition rate (28MHz in theory for DCR=108Hz). That is, the wafer-bonded Ge/Si SPAD can be used in a high-speed field. Finally, the effect of voltage pulse width, number of photons per pulse, and hold-off time on the performance of the wafer-bonded Ge/Si SPAD at different temperatures is also clarified.

© 2017 Optical Society of America

Full Article  |  PDF Article
More Like This
Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector

Xiaoqiang Chen, Jinlong Jiao, Liqiang Yao, Ruoyun Ji, Yingjie Rao, Huang Wei, Guangyang Lin, Cheng Li, Shaoying Ke, and Songyan Chen
Appl. Opt. 62(12) 3125-3131 (2023)

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode

Nicholas J. D. Martinez, Michael Gehl, Christopher T. Derose, Andrew L. Starbuck, Andrew T. Pomerene, Anthony L. Lentine, Douglas C. Trotter, and Paul S. Davids
Opt. Express 25(14) 16130-16139 (2017)

Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer

Shaoying Ke, Shaoming Lin, Xin Li, Jun Li, Jianfang Xu, Cheng Li, and Songyan Chen
Opt. Express 24(3) 1943-1952 (2016)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (10)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Equations (12)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved