Abstract
The properties of deep-level defects in thin films grown under different Se beam pressure
were investigated by photocapacitance (PC) and time-resolved
photoluminescence (TRPL) measurements. A generally known deep-level
defect located at around 0.8 eV above the valence band was identified
for all samples by transient photocapacitance measurement, the
position of which was unvaried with the Se beam pressure. The defect
concentration and the capture cross section of the minority carrier
were obtained from the steady-state photocapacitance and TRPL
measurements, which were evaluated to be on the order of and , respectively, in the Se beam pressure range from to . The relatively higher defect concentration and
larger minority carrier capture cross section were considered as
possible causes of the degradation of the conversion efficiency of
CIGS solar cells grown under low Se beam pressure.
© 2017 Optical Society of
America
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