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Grinding and chemical mechanical polishing process for micropore x-ray optics fabricated with deep reactive ion etching

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Abstract

Silicon micropore optics using deep reactive ion etching of silicon wafers has been being developed for future x-ray astronomy missions. Sidewalls of the micropores through a thin wafer with a typical thickness of hundreds of micrometers and a pore width of 20μm are used for x-ray mirrors. However, burr structures observed after etching with a typical height of a few micrometers at the micropore edges are known to significantly reduce x-ray reflectivity. A new grinding and chemical mechanical polishing process is introduced to remove the burr structures. Both sides of the silicon wafer were ground and precisely polished after etching. X-ray reflectivity measurements confirmed an increase of reflectivity by 2–15 times at incident angles of 0.8–0.2 deg. The surface microroughness worsened from 2.0±0.2nmrms to 7.80.8+0.6nmrms; however, an additional annealing recovered the smooth surface and the estimated surface microroughness was <1.4nmrms. This new process enables not only removing the burr structures but also choosing a flat part of the sidewalls for better angular resolution.

© 2019 Optical Society of America

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