Abstract

The paper presents electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but, at lower temperatures, the misfit dislocations become more important, and detectors grown on GaSb become better.

© 2020 Optical Society of America

High-speed mid-wave infrared interband cascade photodetector at room temperature

Zhiyang Xie, Jian Huang, Xuliang Chai, Zhuo Deng, Yaojiang Chen, Qi Lu, Zhicheng Xu, Jianxin Chen, Yi Zhou, and Baile Chen
Opt. Express 28(24) 36915-36923 (2020)

Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, and Li He
Opt. Express 25(3) 1629-1635 (2017)

Upside-down InAs/InAs_1-xSb_x type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier

Gongrong Deng, Xinbo Song, Mingguo Fan, Tingting Xiao, Zhibing Luo, Niu Chen, Wenyun Yang, and Yiyun Zhang
Opt. Express 28(9) 13616-13624 (2020)

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra

Junkai Jiang, Guowei Wang, Donghai Wu, Yingqiang Xu, Faran Chang, Wenguang Zhou, Nong Li, Dongwei Jiang, Hongyue Hao, Suning Cui, Weiqiang Chen, Xueyue Xu, Haiqiao Ni, Ying Ding, and Zhi-Chuan Niu
Opt. Express 30(21) 38208-38215 (2022)

Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region

Bo Wen Jia, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, and Soon Fatt Yoon
Opt. Express 26(6) 7227-7234 (2018)