Abstract
Experimentally, it is known that the degree of polarization (DOP) of luminescence is a sensitive function of strain in III–V materials. It has been assumed that DOP = $-{K_e} ({e_1} - {e_2})$ and that the rotated degree of polarization = $2 {K_e} {e_6}$, where ${K_e}$ is a positive calibration constant, ${e_1}$ and ${e_2}$ are the normal components of strain along perpendicular “1” and “2” directions, and ${e_6} = {e_{12}}$ is the tensor shear strain. ${K_e}$ has been measured experimentally for GaAs and InP. In this paper, the results of a simple analytic determination of expressions for DOP as a function of strain are presented. Given the wide ranges reported for the strain deformation potentials $b$ and $d$, it is not possible to give definitive and meaningful numerical values for expressions for DOP and ${K_e}$. However, the sensitivity of DOP to strain suggests that it might be possible to design simple experiments to provide accurate values for the deformation potentials. The $b$ and $d$ deformation potentials might not be independent. For the results presented here and in the limit of isotropic material, an isotropic result for the DOP is found if $d = \sqrt 3 b$.
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