1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

Xiaojuan Chen; Chang Qu

doi:10.1364/AO.59.000628

Applied Optics
Vol. 59,
Issue 3,
pp. 628-634
(2020)
•https://doi.org/10.1364/AO.59.000628

1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold

Xiaojuan Chen and Chang Qu

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Xiaojuan Chen and Chang Qu, "1/f noise analysis of 980 nm InGaAs/GaAs laser diodes below the lasing threshold," Appl. Opt. 59, 628-634 (2020)

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Related Topics
Table of Contents Category
- Lasers, Optical Amplifiers, and Laser Optics
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About this Article
History
- Original Manuscript: September 17, 2019
- Revised Manuscript: December 1, 2019
- Manuscript Accepted: December 2, 2019
- Published: January 14, 2020

Abstract

We present a ${1/f}$ noise model of 980 nm InGaAs/GaAs laser diodes (LDs) operated below the lasing threshold to study the correlation between ${1/f}$ noise and fluctuation of surface nonradiative recombination current $ {I_{\rm nr}} $. In InGaAs/GaAs LDs, nonradiative recombination current components have been identified as being primarily related to surface recombination, which depends on surface oxide traps and lattice dislocation. An analysis of the experimental comparison of $ {I_{\rm nr}} $ and ${1/f}$ noise spectral density with constant current and temperature aging tests further shows the correlation and verifies the ${1/f}$ noise model, which can be interpreted as a change in carriers and trap density of a certain surface. This model permits facet stability to be investigated.

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Epitaxial Layer	Materials	Thickness (nm)	Doping Concentration ( ${c m}^{- 3}$ )
p-cap layer	GaAs	300	C: $(1 \sim 3) \times 10^{19}$
p-cladding layer	${A l}_{0.3} {G a}_{0.7} A s$	600	C: $1 \times 10^{18}$
Waveguide layer	${A l}_{0.1} {G a}_{0.9} A s$	850	—
Quantum well	${I n}_{0.2} {G a}_{0.8} A s$	7	—
Barrier layer	${A l}_{0.1} {G a}_{0.9} A s$	100	—
Quantum well	${I n}_{0.2} {G a}_{0.8} A s$	7	—
Waveguide layer	${A l}_{0.1} {G a}_{0.9} A s$	1150	—
n-cladding layer	${A l}_{0.3} {G a}_{0.7} A s$	600	Si: $1 \times 10^{18}$
Buffer layer	GaAs	300	Si: $1 \times 10^{18}$
Substrate	GaAs (100) deviation $⟨ 111 ⟩ 2^{\circ}$ , Si: $1 \times 10^{18}$

Forward Bias Current $I_{f}$ (mA)	Frequency Exponent Factor $γ$	$1 / f$ Noise Amplitude $B$ at $f = 1 H z$ ( $A^{2} / H z$ )
11.5 ( $\approx \frac{1}{60} I_{t h}$ )	0.82	$1.554 \times 10^{- 15}$
23.0 ( $\approx \frac{1}{30} I_{t h}$ )	0.83	$3.231 \times 10^{- 15}$
230 ( $\approx \frac{1}{3} I_{t h}$ )	0.95 ( $f : 1 H z \sim 100 H z$ )	$1.224 \times 10^{- 14}$
230 ( $\approx \frac{1}{3} I_{t h}$ )	1.40 ( $f : 100 H z \sim 10 k H z$ )	$1.224 \times 10^{- 14}$
345 ( $\approx \frac{1}{2} I_{t h}$ )	1.05	$6.683 \times 10^{- 14}$
552 ( $\approx \frac{4}{5} I_{t h}$ )	1.06	$1.583 \times 10^{- 13}$

Epitaxial Layer	Materials	Thickness (nm)	Doping Concentration ( ${c m}^{- 3}$ )
p-cap layer	GaAs	300	C: $(1 \sim 3) \times 10^{19}$
p-cladding layer	${A l}_{0.3} {G a}_{0.7} A s$	600	C: $1 \times 10^{18}$
Waveguide layer	${A l}_{0.1} {G a}_{0.9} A s$	850	—
Quantum well	${I n}_{0.2} {G a}_{0.8} A s$	7	—
Barrier layer	${A l}_{0.1} {G a}_{0.9} A s$	100	—
Quantum well	${I n}_{0.2} {G a}_{0.8} A s$	7	—
Waveguide layer	${A l}_{0.1} {G a}_{0.9} A s$	1150	—
n-cladding layer	${A l}_{0.3} {G a}_{0.7} A s$	600	Si: $1 \times 10^{18}$
Buffer layer	GaAs	300	Si: $1 \times 10^{18}$
Substrate	GaAs (100) deviation $⟨ 111 ⟩ 2^{\circ}$ , Si: $1 \times 10^{18}$

Forward Bias Current $I_{f}$ (mA)	Frequency Exponent Factor $γ$	$1 / f$ Noise Amplitude $B$ at $f = 1 H z$ ( $A^{2} / H z$ )
11.5 ( $\approx \frac{1}{60} I_{t h}$ )	0.82	$1.554 \times 10^{- 15}$
23.0 ( $\approx \frac{1}{30} I_{t h}$ )	0.83	$3.231 \times 10^{- 15}$
230 ( $\approx \frac{1}{3} I_{t h}$ )	0.95 ( $f : 1 H z \sim 100 H z$ )	$1.224 \times 10^{- 14}$
230 ( $\approx \frac{1}{3} I_{t h}$ )	1.40 ( $f : 100 H z \sim 10 k H z$ )	$1.224 \times 10^{- 14}$
345 ( $\approx \frac{1}{2} I_{t h}$ )	1.05	$6.683 \times 10^{- 14}$
552 ( $\approx \frac{4}{5} I_{t h}$ )	1.06	$1.583 \times 10^{- 13}$

Abstract

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Applied Optics