Optimized plasmonic reversible logic gate for low loss communication

Kuldeep Choudhary; Santosh Kumar; Santosh Kumar; Santosh Kumar

doi:10.1364/AO.428158

Applied Optics
Vol. 60,
Issue 16,
pp. 4567-4572
(2021)
•https://doi.org/10.1364/AO.428158

Optimized plasmonic reversible logic gate for low loss communication

Kuldeep Choudhary and Santosh Kumar

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Kuldeep Choudhary and Santosh Kumar, "Optimized plasmonic reversible logic gate for low loss communication," Appl. Opt. 60, 4567-4572 (2021)

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Abstract

With the development of plasmonic optical waveguides, numerous nanostructures based on different materials can be fabricated in a controlled way. While doing reversible computing, reversible logic gates are the necessary requirement to reduce the loss of information with less power consumption. The proposed design of the Feynman logic gate is simulated by a cascading metal-insulator-metal optical waveguide based on Mach–Zehnder interferometers. The footprint of the proposed Feynman logic gate is ${62}\;{\unicode{x00B5}{\rm m}} \times 9\;{\unicode{x00B5}{\rm m}}$, the extinction ratio is 10.57 dB, and the insertion loss is ${-}{0.969}\;{\rm dB}$ and ${-}{1.191}\;{\rm dB}$, which is much better compared to an electro-optic-based exiting Feynman logic gate. The results are obtained by simulating the proposed structure using the finite difference time domain method and verified by using mathematical computation in MATLAB.

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Data underlying the results of this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameters	EO MZI [22]	Plasmonic MZI [Proposed]	EO MZI-Based Feynman Gate [22]	Plasmonic-Based Feynman Gate [Proposed]
Substrate material	${L i N b O}_{3}$	Poly(2-methoxy-5-(28-ethylhexyloxy)-PPV) [MEH-PPV]	${L i N b O}_{3}$	[MEH-PPV]
Wafer size (in µm)	$L = 33, 000$ , $W = 60$ , substrate $t h i c k n e s s = 10$	$L = 28.3$ , $W = 4.0$ , $t h i c k n e s s = 0.5$	L = more than 33,000, W = more than 60, thickness = more than 10	$L = 62$ , $W = 9$ , $t h i c k n e s s = 0.5$
Cladding material	Air ( $t h i c k n e s s = 2 µ m$ )	Air ( $t h i c k n e s s = 1 µ m$ )	Air ( $t h i c k n e s s = 2 µ m$ )	Air ( $t h i c k n e s s = 1 µ m$ )
Channel profile material	Titanium-diffused lithium niobate ( $T i - {L i N b O}_{3}$ )- $R I = 2.1459$	Dielectric material ( $R I = 2.01$ )	Titanium-diffused lithium niobate ( $T i - {L i N b O}_{3}$ )- $R I = 2.1459$	Dielectric material ( $R I = 2.01$ )

Sl. No.	Parameter	Formula Used	Plasmonic Feynman Gate (dB) [Proposed]	Electro-Optic Feynman Gate Ref. [22] (in dB)
1.	Insertion loss	$10 \log_{10} (\frac{P_{O U T}}{P_{I N}})$	$- 0.969$ (for output “ $P$ ”)	$- 6.14$ (for output “ $P$ ”)
		( $P_{O U T}$ —peak output power)	$- 0.969$ (for output “ $P$ ”)	$- 6.14$ (for output “ $P$ ”)
		( $P_{O U T}$ —peak output power)	$- 1.191$ (for output “ $Q$ ”)	$- 1.43$ (for output “ $Q$ ”)
		( $P_{I N}$ —peak input power)	$- 1.191$ (for output “ $Q$ ”)	$- 1.43$ (for output “ $Q$ ”)
2.	Extinction ratio	$10 \log_{10} (\frac{P_{O N}}{P_{O F F}})$	12.78 (for output “ $P$ ”)	—
		( $P_{O N}$ —output peak power in ON state)	10.57 (for output “ $Q$ ”)
		( $P_{O F F}$ —output peak power in OFF state)	10.57 (for output “ $Q$ ”)

Parameters	EO MZI [22]	Plasmonic MZI [Proposed]	EO MZI-Based Feynman Gate [22]	Plasmonic-Based Feynman Gate [Proposed]
Substrate material	${L i N b O}_{3}$	Poly(2-methoxy-5-(28-ethylhexyloxy)-PPV) [MEH-PPV]	${L i N b O}_{3}$	[MEH-PPV]
Wafer size (in µm)	$L = 33, 000$ , $W = 60$ , substrate $t h i c k n e s s = 10$	$L = 28.3$ , $W = 4.0$ , $t h i c k n e s s = 0.5$	L = more than 33,000, W = more than 60, thickness = more than 10	$L = 62$ , $W = 9$ , $t h i c k n e s s = 0.5$
Cladding material	Air ( $t h i c k n e s s = 2 µ m$ )	Air ( $t h i c k n e s s = 1 µ m$ )	Air ( $t h i c k n e s s = 2 µ m$ )	Air ( $t h i c k n e s s = 1 µ m$ )
Channel profile material	Titanium-diffused lithium niobate ( $T i - {L i N b O}_{3}$ )- $R I = 2.1459$	Dielectric material ( $R I = 2.01$ )	Titanium-diffused lithium niobate ( $T i - {L i N b O}_{3}$ )- $R I = 2.1459$	Dielectric material ( $R I = 2.01$ )

Sl. No.	Parameter	Formula Used	Plasmonic Feynman Gate (dB) [Proposed]	Electro-Optic Feynman Gate Ref. [22] (in dB)
1.	Insertion loss	$10 \log_{10} (\frac{P_{O U T}}{P_{I N}})$	$- 0.969$ (for output “ $P$ ”)	$- 6.14$ (for output “ $P$ ”)
		( $P_{O U T}$ —peak output power)	$- 0.969$ (for output “ $P$ ”)	$- 6.14$ (for output “ $P$ ”)
		( $P_{O U T}$ —peak output power)	$- 1.191$ (for output “ $Q$ ”)	$- 1.43$ (for output “ $Q$ ”)
		( $P_{I N}$ —peak input power)	$- 1.191$ (for output “ $Q$ ”)	$- 1.43$ (for output “ $Q$ ”)
2.	Extinction ratio	$10 \log_{10} (\frac{P_{O N}}{P_{O F F}})$	12.78 (for output “ $P$ ”)	—
		( $P_{O N}$ —output peak power in ON state)	10.57 (for output “ $Q$ ”)
		( $P_{O F F}$ —output peak power in OFF state)	10.57 (for output “ $Q$ ”)

Inputs		Outputs
A	B	Q	P
0	0	0	0
0	1	1	0
1	0	1	1
1	1	0	1

Inputs		Outputs
A	B	Q	P
0	0	0	0
0	1	1	0
1	0	1	1
1	1	0	1

Abstract

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Applied Optics