Low power, high speed, all-optical logic gates based on optical bistability in graphene-containing compact microdisk resonators

Peyman Keshtkar; Mehdi Miri; Navid Yasrebi

doi:10.1364/AO.431610

Applied Optics
Vol. 60,
Issue 24,
pp. 7234-7242
(2021)
•https://doi.org/10.1364/AO.431610

Low power, high speed, all-optical logic gates based on optical bistability in graphene-containing compact microdisk resonators

Peyman Keshtkar, Mehdi Miri, and Navid Yasrebi

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Peyman Keshtkar, Mehdi Miri, and Navid Yasrebi, "Low power, high speed, all-optical logic gates based on optical bistability in graphene-containing compact microdisk resonators," Appl. Opt. 60, 7234-7242 (2021)

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Abstract

CMOS-compatible all-optical logic gates based on optical bistability are designed and numerically characterized. For this, graphene and H-BN-based hybrid plasmonic microdisk/waveguide structures have been used to achieve optical bistability at very low threshold power and with small dimensions. The simulation results and coupled-mode theory calculations show that, by adjusting the radius of the microdisk resonator, the threshold power and response time of the optical bistability can be tuned in a wide range. It is shown that bistable devices with overall dimensions of ${2}\;\unicode{x00B5}{\rm m} \times {2.2}\;\unicode{x00B5}{\rm m}$ can easily be designed having either threshold powers as low as 0.79 µW (microdisk radius of 0.92 µm) or very short fall time and rise times of 1.24 and 1.53 ps (microdisk radius of 0.93 µm). The design procedure for the AND, NAND, OR, NOR, and NOT logic gates is discussed. Simulation results show that the proposed logic gates have much smaller footprints, lower power consumption, and higher speeds with acceptable response time, compared with the previously reported structures.

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Data Availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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$R$ (µm)	$λ_{0}$ (µm)	$P_{0}$ (µw)	$γ^{K e r r}$ ( $\times 10^{28}$ )	$γ^{T P A}$ ( $\times 10^{28}$ )	$Q_{i}$	$τ_{i}$ (ps)
0.75	1.559	17.1	3.5	0.38	1099	1.82
0.91	1.53	8.6	2.4	0.26	1898	3.08
0.92	1.54	0.79	2.38	0.26	6260	10.28
0.93	1.56	79	2.35	0.25	623	1.03

Reference	R (µm)	$P_{0}$ (µw)	$Q_{i}$	$t_{f a l l}$ (ps)	$t_{r i s e}$ (ps)
[30]	1	$215 \times 10^{3}$	1750	$\sim 5$	$\sim 5$
[34]	1.16	$2.75 \times 10^{3}$	14330	47	19
[35]	2	$1.34 \times 10^{6}$	500	2	2
[24]	3.25	$6.1 \times 10^{3}$	5017	6.1	32
This work	0.75 µm	17.1	1099	3.17	2.84
	0.91 µm	8.6	1898	3.59	6.06
	0.92 µm	0.79	6260	13.8	22.59
	0.93 µm	79	623	1.24	1.53

Ring Radius	${_{P}}_{i n}$	ER	Speed
(µm)	(µw)	(dB)	(Gbit/s)	Footprint
0.75	291.4	28	76.6	$1.9 µ m \times 1.8 µ m$
0.91	146.6	21.7	45.2	$2 µ m \times 2.2 µ m$
0.92	13.34	21.6	13.41	$2 µ m \times 2.2 µ m$
0.93	1339	18.8	135.3	$2 µ m \times 2.2 µ m$

		${_{P}}_{i n}$	ER	Speed	Footprint or
Reference		(µw)	(dB)	(Gbit/s)	Length
This study	$R = 0.75 µ m$	145.7	28	76.6	$1.78 µ m \times 1.9 µ m$
	$R = 0.91 µ m$	117.1	21.7	45.2	$2.10 µ m \times 2 µ m$
	$R = 0.92 µ m$	11.43	27.5	9.7	$2.12 µ m \times 2 µ m$
	$R = 0.93 µ m$	1069	18.8	135.3	$2.14 µ m \times 2 µ m$
[6]	GaAs	2000	19.5	30	10 µm
	InP	2000	20	10	10 µm
[7]		70000	10	0.310	5 µm
[17]		24000	–	80	–
[5]		1820	12.3	–	–

		${_{P}}_{i n}$	ER	Speed	Footprint or
Reference		(µw)	(dB)	(Gbit/s)	Length
This study	$R = 0.75 µ m$	282.9	5.77	69.8	$1.9 µ m \times 1.8 µ m$
	$R = 0.91 µ m$	143.1	5.71	40.9	$2 µ m \times 2.2 µ m$
	$R = 0.92 µ m$	13.1	11.1	9.7	$2 µ m \times 2.2 µ m$
	$R = 0.93 µ m$	1307	5.9	123.3	$2 µ m \times 2.2 µ m$
[8]		250	–	1	$250 µ m \times 220 µ m$

Reference		${_{P}}_{i n}$ (µw)	ER (dB)	Speed (Gbit/s)	Footprint or Length
This study	$R = 0.75 µ m$	248.23	23.6	87.1	$3.8 µ m \times 1.8 µ m$
	$R = 0.91 µ m$	125.6	21	50.7	$4 µ m \times 2.2 µ m$
	$R = 0.92 µ m$	11.5	18.8	15.05	$4 µ m \times 2.2 µ m$
	$R = 0.93 µ m$	1147.3	26.4	153.2	$4 µ m \times 2.2 µ m$
[6]	GaAs	2000	19.5	30	10 µm
	InP	2000	20	10	10 µm
[16]		7000	–	10	–
[7]		70000	10	0.310	5 µm
[8]		250000	–	1	$200 µ m \times 220 µ m$
[17]		24000	–	80	–
[5]		1820	12.3	–	–

	Gate Type	Input 1/Input 2 Level				IL
		00	01	10	11	–
Output Power Level (µW)	NOT^a	6.753		0.04676		0.39 dB
	AND	0.141	0.755	0.754	8.407	1.43 dB
	NAND	8.854	8.83	8.83	0.01411	1.43 dB
	OR	0.344	9.696	9.698	8.831	2.86 dB
	NOR	8.131	0.08291	0.05433	0.6125	2.86 dB

Abstract

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Equations (15)

Applied Optics