Abstract
Extreme ultraviolet (EUV) lithography is a new generation of integrated circuit manufacturing technology with great development prospects. EUV lithography has more significant demand for high exposure latitude (EL) due to greater requirements for the stability of the light source. Source and mask optimization (SMO) technology is widely used to compensate for imaging distortion. In this paper, we propose an EL-aware SMO (ELASMO) method that uses a low-resist threshold sensitivity (LRS) penalty function to improve the EL in EUV lithography. Compared to conventional SMO, the proposed ELASMO method can significantly enhance the aerial image contrast, improve the EL, and enlarge the process window while ensuring high imaging fidelity.
© 2021 Optical Society of America
Full Article | PDF ArticleMore Like This
Zinan Zhang, Sikun Li, Xiangzhao Wang, Wei Cheng, and Yuejing Qi
Opt. Express 29(4) 5448-5465 (2021)
Yiduo Xu, Fei Peng, Yi Song, and Yan Zhao
Appl. Opt. 62(9) 2227-2236 (2023)
Zhiwei Zhang, Miao Yuan, Zhaoxuan Li, Weichen Huang, He Yang, Zhen Li, and Yanqiu Li
Appl. Opt. 63(2) 327-337 (2024)