High-speed and large-responsivity synchronous-traveling carrier photodetector

Yuan Weifang; Duan Xiaofeng; Li Gongqing; Li Ke; Li Yu; Liu Kai; Huang Yongqing; Ren Xiaomin

doi:10.1364/AO.439933

Applied Optics
Vol. 60,
Issue 30,
pp. 9512-9518
(2021)
•https://doi.org/10.1364/AO.439933

High-speed and large-responsivity synchronous-traveling carrier photodetector

Yuan Weifang, Duan Xiaofeng, Li Gongqing, Li Ke, Li Yu, Liu Kai, Huang Yongqing, and Ren Xiaomin

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Yuan Weifang, Duan Xiaofeng, Li Gongqing, Li Ke, Li Yu, Liu Kai, Huang Yongqing, and Ren Xiaomin, "High-speed and large-responsivity synchronous-traveling carrier photodetector," Appl. Opt. 60, 9512-9518 (2021)

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Table of Contents Category
- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: August 27, 2021
- Revised Manuscript: September 26, 2021
- Manuscript Accepted: September 26, 2021
- Published: October 18, 2021

Abstract

A synchronous-traveling carrier photodetector (STC-PD) with a thick absorption region and large diameter is presented and investigated for 100 Gbps PAM4 applications. In the STC structure, a suitable electric field is introduced to synchronize the traveling of electrons and holes, which achieves high bandwidth while maintaining large responsivity. The characteristics of STC-PD, including electric field distribution, energy band diagram, responsivity, junction capacitance, and frequency response, have been studied carefully.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameter	InP	InGaAs
Electron mobility, $μ_{n}$	$5400 {c m}^{2} / V_{S}$	$12000 {c m}^{2} / V_{S}$
Hole mobility, $μ_{p}$	$200 {c m}^{2} / V_{S}$	$300 {c m}^{2} / V_{S}$
Valence band density of states, $N_{V}$	$1.1 \times 10^{19} {c m}^{- 3}$	$7.7 \times 10^{18} {c m}^{- 3}$
Conduction band density of states, $N_{C}$	$5.7 \times 10^{17} {c m}^{- 3}$	$2.1 \times 10^{17} {c m}^{- 3}$
Electron saturation velocity	$2.6 \times 10^{7} c m / s$	$2.5 \times 10^{7} c m / s$
Hole saturation velocity	$5 \times 10^{6} c m / s$	$5 \times 10^{6} c m / s$
Electron and hole lifetime	$2 \times 10^{- 9} s$	$1 \times 10^{- 7} s$
Electron Auger coefficient	$3.7 \times 10^{- 31} {c m}^{6} / s$	$3.2 \times 10^{- 28} {c m}^{6} / s$
Hole Auger coefficient	$8.7 \times 10^{- 30} {c m}^{6} / s$	$3.2 \times 10^{- 28} {c m}^{6} / s$
Real refractive index (1310 nm)	3.2	3.51
Imaginary refractive index (1310 nm)	0	0.106

Layer	Material	Bandgap (eV)	Thickness (nm)	Dopant Type	Doping Level ( ${c m}^{- 3}$ )
P contact	InGaAs	0.73	20	P	1e19
Block	InGaAsP	1.105	300	P	3e18
P absorption	InGaAs	0.73	500	P	2e16
U absorption	InGaAs	0.73	300	Undoped	1e15
Gap grading	InGaAsP	0.85	40	N	2e15
Gap grading	InGaAsP	1.00	40	N	2e15
Collection	InP	1.35	800	N	5e15
N contact	InP	1.35	300	N	5e18

Layer	Material	Bandgap (eV)	Thickness (nm)	Dopant Type	Doping Level ( ${c m}^{- 3}$ )
P contact	InGaAs	0.73	20	P	1e19
Block	InGaAsP	1.105	300	P	3e18
P absorption	InGaAs	0.73	800	P	1e18
Gap grading	InGaAsP	0.85	40	N	2e15
Gap grading	InGaAsP	1.00	40	N	2e15
Collection	InP	1.35	800	N	5e15
N contact	InP	1.35	300	N	5e18

Layer	Material	Bandgap (eV)	Thickness (nm)	Dopant Type	Doping Level ( ${c m}^{- 3}$ )
P contact	InGaAs	0.73	20	P	1e19
Block	InGaAsP	1.105	300	P	3e18
U absorption	InGaAs	0.73	800	Undoped	1e15
Gap grading	InGaAsP	0.85	40	N	2e15
Gap grading	InGaAsP	1.00	40	N	2e15
Collection	InP	1.35	800	N	5e15
N contact	InP	1.35	300	N	5e18

Parameter	InP	InGaAs
Electron mobility, $μ_{n}$	$5400 {c m}^{2} / V_{S}$	$12000 {c m}^{2} / V_{S}$
Hole mobility, $μ_{p}$	$200 {c m}^{2} / V_{S}$	$300 {c m}^{2} / V_{S}$
Valence band density of states, $N_{V}$	$1.1 \times 10^{19} {c m}^{- 3}$	$7.7 \times 10^{18} {c m}^{- 3}$
Conduction band density of states, $N_{C}$	$5.7 \times 10^{17} {c m}^{- 3}$	$2.1 \times 10^{17} {c m}^{- 3}$
Electron saturation velocity	$2.6 \times 10^{7} c m / s$	$2.5 \times 10^{7} c m / s$
Hole saturation velocity	$5 \times 10^{6} c m / s$	$5 \times 10^{6} c m / s$
Electron and hole lifetime	$2 \times 10^{- 9} s$	$1 \times 10^{- 7} s$
Electron Auger coefficient	$3.7 \times 10^{- 31} {c m}^{6} / s$	$3.2 \times 10^{- 28} {c m}^{6} / s$
Hole Auger coefficient	$8.7 \times 10^{- 30} {c m}^{6} / s$	$3.2 \times 10^{- 28} {c m}^{6} / s$
Real refractive index (1310 nm)	3.2	3.51
Imaginary refractive index (1310 nm)	0	0.106

Abstract

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Equations (6)

Applied Optics