Broadband and CMOS compatible polarization splitter–rotator based on a bi-level taper

Xiaojuan She; Xiaojuan She; Dawei Wang; Dawei Wang; Yingxuan Zhao; Yingxuan Zhao; Haiyang Huang; Han Liao; Han Liao; Junbo Zhu; Junbo Zhu; Yang Li; Yang Li; Zijian Zhu; Zijian Zhu; Rui Huang; Rui Huang; Xiang Liu; Xiang Liu; Qiu Chao; Zhen Sheng; Zhen Sheng; Fuwan Gan; Fuwan Gan

doi:10.1364/AO.437661

Applied Optics
Vol. 60,
Issue 31,
pp. 9619-9623
(2021)
•https://doi.org/10.1364/AO.437661

Broadband and CMOS compatible polarization splitter–rotator based on a bi-level taper

Xiaojuan She, Dawei Wang, Yingxuan Zhao, Haiyang Huang, Han Liao, Junbo Zhu, Yang Li, Zijian Zhu, Rui Huang, Xiang Liu, Qiu Chao, Zhen Sheng, and Fuwan Gan

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Xiaojuan She, Dawei Wang, Yingxuan Zhao, Haiyang Huang, Han Liao, Junbo Zhu, Yang Li, Zijian Zhu, Rui Huang, Xiang Liu, Qiu Chao, Zhen Sheng, and Fuwan Gan, "Broadband and CMOS compatible polarization splitter–rotator based on a bi-level taper," Appl. Opt. 60, 9619-9623 (2021)

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Abstract

A silicon-on-insulator polarization diversity scheme is proposed. Based on an asymmetrical evanescent coupler, a broadband and compact polarization splitter–rotator comprising mode conversion tapers and mode sorting asymmetric Y junctions is optimized with silicon dioxide upper cladding and a silicon nitride waveguide. The simulation results show mode conversion loss is less than 0.2 dB, and the extinction ratio is lower than ${-}{{17}}\;{\rm{dB}}$ in the wavelength range of $1.48\,\,\unicode{x00B5}\text{m}$ to $1.67\,\,\unicode{x00B5}\text{m}$.

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The data used for this work may be provided upon reasonable request to the corresponding author.

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$W_{1 - s i}$	$W_{2 - s i}$	$W_{3 - s i}$	$W_{4 - s i}$	$W_{t}$
0.1	0.66	0.76	0.8	0.35
$W_{1 - \sin}$	$W_{d}$	$L_{1 - S i}$	$L_{2 - S i}$	$L_{3 - S i}$
1.2	0.45	15	180	25
$L_{4 - S i}$	$L_{5 - S i}$	$L_{6 - S i}$	$D_{y}$	$W_{2 - \sin}$
5	100	10	3	0.1

Structure	CE	IL (dB)	Bandwidth (nm)	ER (dB)	Tolerance (nm)	Length ( $µ m$ )
Silicon nanowires [10]	Close to 0	0.2	130	10	(–40,30)	100
MMI couplers [24]	99.5%* 48.3%	0.5	C-band	17	$\pm 40$	203.7
Multimode waveguide [20]	0.2	0.57	85	20	/	47.5
S-bend waveguide [33]	0.6 dB	0.5	110	17.6	$\pm 30$	110.035
Partially etched Si slab [34]	1 dB	/	50	/	$\pm 5$	138
This work	0.5 dB	0.2	190	17	$\pm 20$	335

$W_{1 - s i}$	$W_{2 - s i}$	$W_{3 - s i}$	$W_{4 - s i}$	$W_{t}$
0.1	0.66	0.76	0.8	0.35
$W_{1 - \sin}$	$W_{d}$	$L_{1 - S i}$	$L_{2 - S i}$	$L_{3 - S i}$
1.2	0.45	15	180	25
$L_{4 - S i}$	$L_{5 - S i}$	$L_{6 - S i}$	$D_{y}$	$W_{2 - \sin}$
5	100	10	3	0.1

Structure	CE	IL (dB)	Bandwidth (nm)	ER (dB)	Tolerance (nm)	Length ( $µ m$ )
Silicon nanowires [10]	Close to 0	0.2	130	10	(–40,30)	100
MMI couplers [24]	99.5%* 48.3%	0.5	C-band	17	$\pm 40$	203.7
Multimode waveguide [20]	0.2	0.57	85	20	/	47.5
S-bend waveguide [33]	0.6 dB	0.5	110	17.6	$\pm 30$	110.035
Partially etched Si slab [34]	1 dB	/	50	/	$\pm 5$	138
This work	0.5 dB	0.2	190	17	$\pm 20$	335

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