Abstract

In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal–insulator–semiconductor (MIS) structured n-electrode is fabricated and studied. The ${{\rm SiO}_2}$ insulator layer is adopted to form the MIS structure by using an atomic layer deposition system. After adopting the MIS-structured n-electrode, the ${{\rm SiO}_2}$ intermediate layer enables electron affinity for the contact metal to be higher than the conduction band of the n-AlGaN layer, which favors the electrons to be injected into the n-AlGaN layer by intraband tunneling rather than thermionic emission. Moreover, the thin ${{\rm SiO}_2}$ insulator can share the applied bias, which makes the n-AlGaN layer surface less depleted and thus further facilitates the electron injection. The improved electron injection capability at the metal–semiconductor interface helps reduce the contact resistance and increase electron concentration in the active region, which then improves external quantum efficiency and wall-plug efficiency for the proposed DUV LED.

© 2021 Optica Publishing Group

Reducing the polarization mismatch between the last quantum barrier and p-EBL to enhance the carrier injection for AlGaN-based DUV LEDs

Chunshuang Chu, Danyang Zhang, Hua Shao, Jiamang Che, Kangkai Tian, Yonghui Zhang, and Zi-Hui Zhang
Opt. Mater. Express 11(6) 1713-1719 (2021)

Proposing the n⁺-AlGaN tunnel junction for an efficient deep-ultraviolet light-emitting diode at 254 nm emission

Muhammad Nawaz Sharif, Muhammad Ajmal Khan, Qamar Wali, Pengfei Zhang, Fang Wang, and Yuhuai Liu
Appl. Opt. 61(31) 9186-9192 (2022)

Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer

Sai Pan, Kuili Chen, Yan Guo, Zexiang Liu, Yugang Zhou, Rong Zhang, and Youdou Zheng
Opt. Express 30(25) 44933-44942 (2022)

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Fatemeh Mohammadi Shakiba, Jeffrey Jude, Moses Tumuna, Hoang-Duy Nguyen, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Appl. Opt. 59(17) 5276-5281 (2020)

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

Su-Hui Lin, Ming-Chun Tseng, Kang-Wei Peng, Shouqiang Lai, Meng-Chun Shen, Ray-Hua Horng, Shui-Yang Lien, Dong-Sing Wuu, Hao-Chung Kuo, Tingzhu Wu, and Zhong Chen
Opt. Express 29(23) 37835-37844 (2021)