Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters

Yuanyuan Jing; Yingtian Xu; Chongyang Xu; Li Li; Linlin Shi; He Zhang; He Zhang; Liang Jin; Yonggang Zou; Xiaohui Ma

doi:10.1364/AO.458934

Applied Optics
Vol. 61,
Issue 17,
pp. 5136-5143
(2022)
•https://doi.org/10.1364/AO.458934

Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters

Yuanyuan Jing, Yingtian Xu, Chongyang Xu, Li Li, Linlin Shi, He Zhang, Liang Jin, Yonggang Zou, and Xiaohui Ma

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Yuanyuan Jing, Yingtian Xu, Chongyang Xu, Li Li, Linlin Shi, He Zhang, Liang Jin, Yonggang Zou, and Xiaohui Ma, "Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters," Appl. Opt. 61, 5136-5143 (2022)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: March 25, 2022
- Revised Manuscript: May 17, 2022
- Manuscript Accepted: May 18, 2022
- Published: June 6, 2022

Abstract

A self-powered ultraviolet (UV) photodetector (PD) with a position-controlled array based on zinc oxide (ZnO) nanoclusters (NCs) has been proposed. The structure of the special array makes it possible to reduce the light loss and improve the light trap. The PD innovatively modifies the structure of ZnO PDs, which is distinguished from other traditional devices. The results demonstrate that the ZnO NC array can spontaneously generate the carrier and successfully achieve the detection at zero bias under the radiation of UV light. In this study, the structure is fabricated with two different substrates of silicon (Si) and GaN. At zero bias voltage, the Si-based PD under 365 nm shows the responsivity and external quantum efficiency (EQE) reaching up to 14.1 mA/W and 4.79%, respectively, and the responsivity of the GaN-based detector can be obtained up to 59.9 mA/W; its parameter of EQE is 20.04%, the photocurrent is ${{1}}{{{0}}^{- 5}}\;{\rm{A}}$, and the on/off ratio is 174. Our findings indicate that this structure of the device has potential for applications that require detection of light.

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PDs samples	$I_{P h o t o}$ (A)	$I_{D a r k}$ (A)	$I_{P h} / I_{D}$	$R_{λ}$ (mA/W)	$τ_{r}$ (ms)	$τ_{d}$ (ms)	$D^{*}$ (Jones)	EQE	LDR
Si/ZnO NCs	$- 2.50 \times 1 0^{- 6}$	$- 1.45 \times 1 0^{- 8}$	172	14.1	22.27	32.42	$1.14 \times 1 0^{11}$	4.79%	44.71 dB
GaN/ZnO NCs	$1.06 \times 1 0^{- 5}$	$6.09 \times 1 0^{- 8}$	174	59.9	22.26	27.85	$1.38 \times 1 0^{11}$	20.04%	44.82 dB

Structure	Wavelength [nm]	$R_{λ}$ [mA $W^{- 1}$ ]	$D^{*}$ [Jones]	$τ_{r} / τ_{d}$ [s]	EQE	Ref.
CuO/Si	405	0.398	$3 \times 1 0^{9}$	0.06/0.08	1.22%	[29]
$F e - T i O_{2}$ /Si	350	46	−	0.01/0.02	10%	[30]
GaN MWA/Si	325	131	$3.4 \times 1 0^{12}$	2/2	49.98%	[31]
ZnO/ZnS	340	56	−	0.04/0.04	−	[32]
CuZnS/ZnO	300	12	−	0.7/0.86	−	[33]
Cu NW/ZnO	360	0.65	−	0.5/30	−	[34]
NiO/ZnO	365	0.02	$7.2 \times 1 0^{11}$	0.04/0.07	3.32%	[35]
Graphene/ZnO	365	0.46	−	3/0.5	0.47%	[36]
Si/ZnO NCs	365	14.1	$1.14 \times 1 0^{11}$	0.02/0.03	4.76%	This work
GaN/ZnO NCs	365	59.9	$1.38 \times 1 0^{11}$	0.02/0.03	20.38%	This work

PDs samples	$I_{P h o t o}$ (A)	$I_{D a r k}$ (A)	$I_{P h} / I_{D}$	$R_{λ}$ (mA/W)	$τ_{r}$ (ms)	$τ_{d}$ (ms)	$D^{*}$ (Jones)	EQE	LDR
Si/ZnO NCs	$- 2.50 \times 1 0^{- 6}$	$- 1.45 \times 1 0^{- 8}$	172	14.1	22.27	32.42	$1.14 \times 1 0^{11}$	4.79%	44.71 dB
GaN/ZnO NCs	$1.06 \times 1 0^{- 5}$	$6.09 \times 1 0^{- 8}$	174	59.9	22.26	27.85	$1.38 \times 1 0^{11}$	20.04%	44.82 dB

Structure	Wavelength [nm]	$R_{λ}$ [mA $W^{- 1}$ ]	$D^{*}$ [Jones]	$τ_{r} / τ_{d}$ [s]	EQE	Ref.
CuO/Si	405	0.398	$3 \times 1 0^{9}$	0.06/0.08	1.22%	[29]
$F e - T i O_{2}$ /Si	350	46	−	0.01/0.02	10%	[30]
GaN MWA/Si	325	131	$3.4 \times 1 0^{12}$	2/2	49.98%	[31]
ZnO/ZnS	340	56	−	0.04/0.04	−	[32]
CuZnS/ZnO	300	12	−	0.7/0.86	−	[33]
Cu NW/ZnO	360	0.65	−	0.5/30	−	[34]
NiO/ZnO	365	0.02	$7.2 \times 1 0^{11}$	0.04/0.07	3.32%	[35]
Graphene/ZnO	365	0.46	−	3/0.5	0.47%	[36]
Si/ZnO NCs	365	14.1	$1.14 \times 1 0^{11}$	0.02/0.03	4.76%	This work
GaN/ZnO NCs	365	59.9	$1.38 \times 1 0^{11}$	0.02/0.03	20.38%	This work

Abstract

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Applied Optics