Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors

Mehdi Khabir; Mohammad Azim Karami

doi:10.1364/AO.474633

Applied Optics
Vol. 61,
Issue 33,
pp. 9851-9859
(2022)
•https://doi.org/10.1364/AO.474633

Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors

Mehdi Khabir and Mohammad Azim Karami

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Mehdi Khabir and Mohammad Azim Karami, "Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors," Appl. Opt. 61, 9851-9859 (2022)

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Abstract

In this paper, the influences of the depth and width of the oxide trench isolation between pixels, pixel epitaxial layer thickness for different impurity doping concentrations, and light exposure time on electrical crosstalk are characterized in an array of pinned photodiode CMOS image sensor pixels. The simulation results show that with a proper and simultaneous selection of epitaxial layer doping concentration and epitaxial layer thickness, the electrical crosstalk at long wavelengths can be reduced above 66%. The use of oxide trench isolation depth less than pixel p-well depth leads to an increase in electrical crosstalk of more than 12%. The effect of increasing light exposure time on increasing electrical crosstalk can be minimized by selecting proper epitaxial layer thicknesses.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Acronym	Meaning
CMOS	Complementary metal–oxide–semiconductor
TI	Trench isolation
ECTK	Electrical crosstalk
ECTK, P1	Electrical crosstalk in pixel #1
ELT	Epitaxial layer thickness
ELD	Epitaxial layer doping
PPD	Pinned photodiode
CL	Close region
MI	Middle region
BO	boundary region
DTI	Depth of trench isolation
WTI	Width of trench isolation
EPI	Epitaxial

Parameters	Symbol	Value	Unit
Exposure time	$T_{e x p o s u r e}$	100	µs
Optical power	$P_{o p t}$	$3 \times 10^{- 4}$	W
Transfer gate voltage	$V_{T G}$	1.6	V
Reset gate voltage	$V_{R S T}$	3	V
PPD width	$L_{P P D}$	0.6	µm
PPD depth	$D_{P P D}$	0.8	µm
P-well depth	$D_{P - w e l l}$	1.2	µm
Transfer gate width	$L_{T G}$	0.7	µm
Floating diffusion width	$L_{F D}$	0.1	µm
Reset gate width	$L_{R S T - G}$	0.05	µm
Reset drain width	$L_{R S T - D}$	0.1	µm
PPD doping ( $n$ -type)	${P P D}_{d o p i n g}$	$3 \times 10^{15}$	${c m}^{- 3}$
Transfer gate doping ( $p$ -type)	${T G}_{d o p i n g}$	$6 \times 10^{16}$	${c m}^{- 3}$
Floating diffusion doping ( $n$ -type)	${F D}_{d o p i n g}$	$1 \times 10^{19}$	${c m}^{- 3}$
Anode doping ( $p$ -type)	${A n o d e}_{d o p i n g}$	$1 \times 10^{19}$	${c m}^{- 3}$
Pinning implant doping ( $p$ -type)	${P i n}_{d o p i n g}$	$1 \times 10^{19}$	${c m}^{- 3}$
FD surrounding doping ( $p$ -type)	${F D S}_{d o p i n g}$	$3 \times 10^{16}$	${c m}^{- 3}$
Drain doping ( $n$ -type)	${D r a i n}_{d o p i n g}$	$1 \times 10^{19}$	${c m}^{- 3}$
Trench passivation doping ( $p$ -type)	${T P}_{d o p i n g}$	$1 \times 10^{18}$	${c m}^{- 3}$

		ECTK, P1 (%)
	ELT (µm)	$E L D = 1 e 13 {c m}^{- 3}$	$E L D = 1 e 14 {c m}^{- 3}$	$E L D = 1 e 15 {c m}^{- 3}$	$Δ_{1}$ (%)
$λ = 0.50 µ m$	2	1.66	1.75	2.28	37.34
	2.5	2.52	2.62	3.07	21.82
	3	3.27	3.04	3.51	15.46
	3.5	3.54	3.26	3.59	10.12
	4	3.63	3.31	3.58	9.66
	4.5	3.68	3.32	3.58	10.84
	5	3.68	3.35	3.58	9.85
$λ = 0.60 µ m$	2	3.29	3.66	5.32	61.70
	2.5	6.61	7.20	8.99	36.00
	3	9.86	9.93	11.13	12.88
	3.5	12.31	11.62	12.35	6.28
	4	13.44	12.57	13.05	6.92
	4.5	14.07	13.48	13.50	4.37
	5	14.41	13.79	13.73	4.95
$λ = 0.70 µ m$	2	4.11	4.83	6.50	58.15
	2.5	7.54	9.40	12.59	66.97
	3	12.93	12.89	14.53	12.72
	3.5	16.48	15.31	16.36	7.64
	4	18.19	16.95	18.12	7.31
	4.5	19.45	18.72	18.05	7.75
	5	19.66	19.19	18.09	8.67
$λ = 0.80 µ m$	2	6.05	6.36	8.07	33.38
	2.5	10.67	11.06	13.21	23.80
	3	15.61	15.61	16.48	5.57
	3.5	18.74	18.36	18.45	2.06
	4	20.61	20.01	19.76	4.30
	4.5	21.84	21.06	20.60	6.01
	5	22.53	21.82	21.25	6.02
$λ = 0.90 µ m$	2	9.30	9.63	10.63	14.30
	2.5	13.40	13.67	15.54	15.97
	3	18.24	18.24	18.46	1.20
	3.5	21.24	20.70	20.46	3.81
	4	22.89	22.37	21.68	5.58
	4.5	24.11	23.33	22.41	7.58
	5	24.71	23.87	23.03	7.29

		ECTK, P1 (%)
	$Λ$ (µm)	$D T I = 0.5 (µ m)$	$D T I = 1 (µ m)$	$D T I = 1.5 (µ m)$	$Δ_{2}$ (%)
$W T I = 50 n m$	0.50	3.17	3.56	3.21	12.30^*
	0.55	6.63	7.37	6.99	11.16
	0.60	10.14	11.17	11.00	10.15
	0.65	12.41	13.59	13.57	9.50
	0.70	13.43	14.74	14.70	9.75
	0.75	14.46	15.04	15.12	4.56
	0.80	15.40	15.94	16.05	4.22
	0.85	16.36	16.96	16.96	3.66
	0.90	17.79	18.46	18.46	3.76
$W T I = 100 n m$	0.50	2.93	3.26	2.93	11.26
	0.55	6.34	6.83	6.43	7.72
	0.60	9.65	10.45	10.17	8.29
	0.65	11.81	12.66	12.56	7.19
	0.70	12.77	13.72	13.72	7.43
	0.75	14.21	14.79	14.87	4.64
	0.80	15.07	15.72	15.83	5.04
	0.85	16.21	16.66	16.81	3.70
	0.90	17.56	18.24	18.46	5.12
$W T I = 150 n m$	0.50	2.98	3.26	3.10	9.39
	0.55	6.21	6.74	6.31	8.53
	0.60	9.51	10.24	9.99	7.67
	0.65	11.60	12.50	12.39	7.75
	0.70	12.58	13.54	13.47	7.63
	0.75	13.96	14.62	14.62	4.72
	0.80	14.85	15.50	15.61	5.11
	0.85	15.91	16.51	16.66	4.71
	0.90	17.34	17.79	18.01	3.86

	$λ = 0.50 µ m$			$λ = 0.60 µ m$			$λ = 0.70 µ m$			$λ = 0.80 µ m$
ELT (µm)	ECTK 100 µs	ECTK 200 µs	$Δ_{3}$ (%)	ECTK 100 µs	ECTK 200 µs	$Δ_{3}$ (%)	ECTK 100 µs	ECTK 200 µs	$Δ_{3}$ (%)	ECTK 100 µs	ECTK 200 µs	$Δ_{3}$ (%)
1	0.85	0.94	10.58	1.36	1.50	10.29	2.36	2.40	1.69	4.43	4.43	0
1.5	1.06	1.17	10.37	1.56	1.72	10.25	2.44	2.50	2.45	4.04	4.14	2.47
2	1.70	1.88	10.58	3.55	3.89	9.57	4.74	4.87	2.74	6.36	6.51	2.35
2.5	2.58	2.85	10.46	7.00	7.69	9.85	9.17	10.30	12.32	11.30	11.37	0.61
3	3.13	3.47	10.86	9.95	10.90	9.54	13.17	14.78	12.22	15.61	15.66	0.32
3.5	3.35	3.69	10.14	11.73	12.82	9.29	15.78	17.62	11.66	18.36	18.36	0
4	3.40	3.76	10.58	12.70	13.84	8.97	17.33	18.98	9.52	20.01	19.96	0.25
4.5	3.40	3.76	10.58	13.28	14.44	8.73	18.35	19.24	4.85	21.06	21.03	0.14
5	3.40	3.76	10.58	13.63	14.81	8.65	19.00	19.34	1.78	21.75	21.71	0.18

Abstract

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Applied Optics