On-chip silicon nano-slab photodetector integrated wavelength division de-multiplexer in the 850 nm band

Avijit Chatterjee; Shankar Kumar Selvaraja

doi:10.1364/AO.450621

Applied Optics
Vol. 61,
Issue 6,
pp. 1403-1412
(2022)
•https://doi.org/10.1364/AO.450621

On-chip silicon nano-slab photodetector integrated wavelength division de-multiplexer in the 850 nm band

Avijit Chatterjee and Shankar Kumar Selvaraja

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Avijit Chatterjee and Shankar Kumar Selvaraja, "On-chip silicon nano-slab photodetector integrated wavelength division de-multiplexer in the 850 nm band," Appl. Opt. 61, 1403-1412 (2022)

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Abstract

We present an on-chip photodetector integrated wavelength filter on a SiN-on-silicon-on-insulator (SOI) platform in the 850 nm wavelength window. The wavelength filter is designed using an echelle grating with a distributed Bragg reflector as the grating reflectors. We present the design and experimental realization of a six-channel wavelength filter with a channel spacing of 10 nm. Experimentally, we achieve an insertion loss of 4.3 dB and an adjacent channel cross talk of 22 dB. We demonstrate a silicon nano-slab waveguide integrated metal–semiconductor–metal photodetector with a maximum responsivity of 0.56 A/W and dark current of 217 nA. Furthermore, we demonstrate the integration of the echelle grating with the detector and show the feasibility of a CMOS compatible SiN-on-SOI platform for various applications, including short-reach communication and sensing applications.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Ref.	Bias (V)	Dark Current ( $n A / µ m^{2}$ )	R (A/W)	$f_{3 d B}$ (GHz)	Platform (Active Layer Thickness)	Electrode Separation	Integrated
[35]	1	$2 \times 10^{- 4}$	$5.7 \times 10^{- 3}$	140	SOI, Si MSM (100 nm)	100 nm	No
[36]	5	1.8	0.39	0.46	SOI, Si MSM (Bulk)	2 µm	No
[9]	10	0.29	0.81	7.5	SiN-on-SOI, Si MSM (220 nm)	4 µm	Yes
This work	10	5.93	0.56	—	SiN-on-SOI, Si MSM (70 nm)	5 µm	Yes

Refs.	Material	Device Type	Insertion Loss (dB)	Cross Talk (dB)	Channel Spacing (nm)	Channels (#)	Footprint ( ${m m}^{2}$ )	Photodetector Responsivity, Dark Current
[37]	SiON	AWG	$- 2.6$	35	0.16	125	546	No
[19]	SiN	AWG	$- 0.1$	23	0.5	8	2.8	No
[20]	SiN	AWG	$- 1.3$	17	1.5	40	0.62	No
[13]	SiON	Echelle	$- 14$	25	0.25	120	66	No
[29]	SiON	Echelle	$- 11$	18	0.5	29	54	0.41 A/W, 2 µA
This work	SiN	Echelle	$- 4.3$	22	10	6	0.29	0.56 A/W, 217 nA

Ref.	Bias (V)	Dark Current ( $n A / µ m^{2}$ )	R (A/W)	$f_{3 d B}$ (GHz)	Platform (Active Layer Thickness)	Electrode Separation	Integrated
[35]	1	$2 \times 10^{- 4}$	$5.7 \times 10^{- 3}$	140	SOI, Si MSM (100 nm)	100 nm	No
[36]	5	1.8	0.39	0.46	SOI, Si MSM (Bulk)	2 µm	No
[9]	10	0.29	0.81	7.5	SiN-on-SOI, Si MSM (220 nm)	4 µm	Yes
This work	10	5.93	0.56	—	SiN-on-SOI, Si MSM (70 nm)	5 µm	Yes

Refs.	Material	Device Type	Insertion Loss (dB)	Cross Talk (dB)	Channel Spacing (nm)	Channels (#)	Footprint ( ${m m}^{2}$ )	Photodetector Responsivity, Dark Current
[37]	SiON	AWG	$- 2.6$	35	0.16	125	546	No
[19]	SiN	AWG	$- 0.1$	23	0.5	8	2.8	No
[20]	SiN	AWG	$- 1.3$	17	1.5	40	0.62	No
[13]	SiON	Echelle	$- 14$	25	0.25	120	66	No
[29]	SiON	Echelle	$- 11$	18	0.5	29	54	0.41 A/W, 2 µA
This work	SiN	Echelle	$- 4.3$	22	10	6	0.29	0.56 A/W, 217 nA

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Applied Optics