Magnetically tunable ultralow threshold optical bistability by exciting LRSPR in InAs/graphene layers at the terahertz region

Kumar Avinash; Nabamita Goswami; Ardhendu Saha

doi:10.1364/AO.488293

Applied Optics
Vol. 62,
Issue 14,
pp. 3797-3805
(2023)
•https://doi.org/10.1364/AO.488293

Magnetically tunable ultralow threshold optical bistability by exciting LRSPR in InAs/graphene layers at the terahertz region

Kumar Avinash, Nabamita Goswami, and Ardhendu Saha

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Kumar Avinash, Nabamita Goswami, and Ardhendu Saha, "Magnetically tunable ultralow threshold optical bistability by exciting LRSPR in InAs/graphene layers at the terahertz region," Appl. Opt. 62, 3797-3805 (2023)

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Table of Contents Category
- Surface Optics and Plasmonics
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About this Article
History
- Original Manuscript: February 20, 2023
- Revised Manuscript: April 12, 2023
- Manuscript Accepted: April 12, 2023
- Published: May 9, 2023

Abstract

With the experimental corroboration employing a transfer matrix method, an analytical observation of optical bistability using long-range surface plasmon resonance (LRSPR) through the external magnetic field is presented for a very low threshold value. The proposed analytical method has been verified with the reported experimental data provided by Liu et al. [Curr. Appl. Phys. 29, 66 (2021) [CrossRef] ]. Now theoretical analysis is further extended in the proposed multilayered structure comprising an InAs layer sandwiched between two graphene layers, whose electromagnetic response at 2 THz can be regulated by employing a magnetic field and may tune the optical bistability without modifying the geometry or the characteristics of the structure. The observed threshold intensity for the switch-up is ${6.6615} \times {{10}^4}\;{\rm W}/{{\rm cm}^2}$ at 0.001 T; thus, this analytical approach is able to achieve 2 orders lower threshold for magnetically tunable upswitching of the optical bistable process. This suggested magnetically adjustable optical bistable arrangement gives a possibility for the comprehension of optical logic gates, optic memory, opto-transistors, and switches at a low switching threshold due to extraordinary features of the composite layers due to local field amplification of the graphene layer.

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	Applied Magnetic Field	Applied Electric Field up (V/m)	Switch-Up Intensity, Eup ( $W / c m^{2}$ )	Switch-Down Intensity, Edown ( $W / c m^{2}$ )	Applied Electric Field Down (V/m)	References
Highly tunable bistability using an external magnetic field in photonic crystals containing graphene and magnetooptical layers.	$f = 1 G H z$
	0.4 T	$4.23 \times 10^{9}$	$9.46 \times 10^{12}$	$1.85 \times 10^{12}$	$1.87 \times 10^{9}$
	1.0 T	$2.93 \times 10^{9}$	$4.56 \times 10^{12}$	$1.65 \times 10^{12}$	$1.76 \times 10^{9}$	[27]
	2.0 T	$2.65 \times 10^{9}$	$3.74 \times 10^{12}$	$1.58 \times 10^{12}$	$1.72 \times 10^{9}$
The effect of magnetic field on bistability in 1D photonic crystal doped by magnetized plasma and coupled nonlinear defects.	$f = 2 G H z$
	0.15 T	$2.2367 \times 10^{6}$	$2.6540 \times 10^{6}$	$0.2890 \times 10^{6}$	$0.7380 \times 10^{6}$
	0.2 T	$2.0174 \times 10^{6}$	$2.1590 \times 10^{6}$	$0.2780 \times 10^{6}$	$0.7239 \times 10^{6}$	[29]
	0.25 T	$1.8979 \times 10^{6}$	$1.9110 \times 10^{6}$	$0.2660 \times 10^{6}$	$0.7081 \times 10^{6}$
Proposed work	$f = 2 T H z$
	0.001 T	$3.5436 \times 10^{5}$	$6.6615 \times 10^{4}$	$0.7239 \times 10^{4}$	$1.1682 \times 10^{5}$
	0.005 T	$3.5194 \times 10^{5}$	$6.5709 \times 10^{4}$	$0.7205 \times 10^{4}$	$1.1654 \times 10^{5}$	--
	0.008 T	$3.5012 \times 10^{5}$	$6.5031 \times 10^{4}$	$0.7188 \times 10^{4}$	$1.1640 \times 10^{5}$
	0.01 T	$3.4890 \times 10^{5}$	$6.4578 \times 10^{4}$	$0.7172 \times 10^{4}$	$1.1628 \times 10^{5}$

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