Design of optical anapole modes of all-dielectric nanoantennas for SERS applications

Debao Wang; Jingwei Lv; Jianxin Wang; Yanru Ren; Ying Yu; Wei Li; Paul K. Chu; Chao Liu

doi:10.1364/AO.494145

Applied Optics
Vol. 62,
Issue 20,
pp. 5538-5546
(2023)
•https://doi.org/10.1364/AO.494145

Design of optical anapole modes of all-dielectric nanoantennas for SERS applications

Debao Wang, Jingwei Lv, Jianxin Wang, Yanru Ren, Ying Yu, Wei Li, Paul K. Chu, and Chao Liu

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Debao Wang, Jingwei Lv, Jianxin Wang, Yanru Ren, Ying Yu, Wei Li, Paul K. Chu, and Chao Liu, "Design of optical anapole modes of all-dielectric nanoantennas for SERS applications," Appl. Opt. 62, 5538-5546 (2023)

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Abstract

To obtain large electric field enhancement while mitigating material losses, an all-dielectric nanoantenna composed of a heptamer and nanocubes is designed and analyzed. A numerical simulation by the finite element method reveals that the nanoantenna achieves the optical electric anapole modes, thereby significantly enhancing the coupling between different dielectrics to further improve the near-field enhancement and spontaneous radiation. Field enhancement factors $|{\rm E}/{{\rm E}_0}{|^2}$ of 3,563 and 5,395 (AM1 and AM2) and a Purcell factor of 3,872 are observed in the wavelength range between 350 and 800 nm. This nanoantenna has promising potential in applications involving surface-enhanced Raman scattering and nonlinearities due to its low cost and excellent compatibility.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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References	Characteristics	Wavelength range (nm)	$\| E / E_{0} \|^{2}$
[36]	21 nm—thickness ${S i O}_{2}$ layer	200–1000	35
[37]	Si nanodisk with rectangular holes	600–800	100
[37]	Combination of perforated Si nanodisk and ${W S e}_{2}$	600–800	100
[38]	Double-layer AlGaAs nanodisks with gaps	350–800	80
[38]	Combination of double-layer AlGaAs nanodisks and GaAs cylinder	350–800	60
[16]	Si nanoring	500–1000	8
This work	Combination of Si and ${S i O}_{2}$ nanostructure	350–800	5395

References	Characteristics	Wavelength range (nm)	Purcell factor
[42]	The gold dimer	400–800	$\sim 300$
[42]	The Si dimer	400–800	$\sim 80$
[43]	All-dielectric Si nanoparticle (SiNP)	20–200	$\sim 25$
[44]	Si cuboid dielectric	400–850	$\sim 18$
[45]	Ring in free space	600–750	$\sim 900$
This work	Combination of Si and ${S i O}_{2}$ nanostructure	350–800	3872

References	Characteristics	Wavelength range (nm)	$\| E / E_{0} \|^{2}$
[36]	21 nm—thickness ${S i O}_{2}$ layer	200–1000	35
[37]	Si nanodisk with rectangular holes	600–800	100
[37]	Combination of perforated Si nanodisk and ${W S e}_{2}$	600–800	100
[38]	Double-layer AlGaAs nanodisks with gaps	350–800	80
[38]	Combination of double-layer AlGaAs nanodisks and GaAs cylinder	350–800	60
[16]	Si nanoring	500–1000	8
This work	Combination of Si and ${S i O}_{2}$ nanostructure	350–800	5395

References	Characteristics	Wavelength range (nm)	Purcell factor
[42]	The gold dimer	400–800	$\sim 300$
[42]	The Si dimer	400–800	$\sim 80$
[43]	All-dielectric Si nanoparticle (SiNP)	20–200	$\sim 25$
[44]	Si cuboid dielectric	400–850	$\sim 18$
[45]	Ring in free space	600–750	$\sim 900$
This work	Combination of Si and ${S i O}_{2}$ nanostructure	350–800	3872

Abstract

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Figures (7)

Tables (2)

Equations (7)

Applied Optics