Design and optimization of an SOI-based electro-absorption-type VOA

Yuming Huang; Yuming Huang; Lidan Lu; Lidan Lu; Guang Chen; Guang Chen; Yingjie Xu; Yingjie Xu; Lianqing Zhu; Lianqing Zhu; Lianqing Zhu

doi:10.1364/AO.497504

Applied Optics
Vol. 62,
Issue 24,
pp. 6316-6322
(2023)
•https://doi.org/10.1364/AO.497504

Design and optimization of an SOI-based electro-absorption-type VOA

Yuming Huang, Lidan Lu, Guang Chen, Yingjie Xu, and Lianqing Zhu

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Yuming Huang, Lidan Lu, Guang Chen, Yingjie Xu, and Lianqing Zhu, "Design and optimization of an SOI-based electro-absorption-type VOA," Appl. Opt. 62, 6316-6322 (2023)

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Abstract

A silicon-on-insulator (SOI) variable optical attenuator (VOA) based on the plasma dispersion effect is optimized and realized, and the effects of doping concentration and distance about the VOA’s modulation depth and attenuation efficiency are investigated. Two structures of the VOA component are designed to achieve low power consumption, high stability, and high modulation efficiency. The modulation depth of the series VOA scheme reached 60.11 dB, and the insertion loss is only 4.87 dB. Compared with conventional components, our optimized VOA can not only improve the modulation accuracy and efficiency but also reduce the wavelength dependence.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Related Papers	Ref. [13]	Ref. [16]	Scheme 1	Scheme 2
Power consumption@20 dB	800 mW	202 mW	143 mW	264 mW
Modulation depth	42 dB	30 dB	59.08 dB	60.11 dB
Attenuation efficiency@20 dB	0.20 dB/mA	3.76 dB/mA	0.18 dB/mA	1.62 dB/mA
Modulation length	8 mm	1 mm	1.38 mm	1.38 mm
Thickness of the top silicon	3 µm	220 nm	220 nm	220 nm
Insertion loss		12.50 dB	4.54 dB	4.87 dB

Related Papers	Modulation depth	Power Consumption	Modulation Length	Response Time
Scheme 1	59.08 mW	143 mW@20 dB	1.38 mm	5.7 µs
Scheme 2	60.11 dB	264 mW@20 dB	1.38 mm	5.7 µs
Ref. [17]	50 dB		7.5 mm	5 µs
Ref. [18]	35 dB	233 mW@35 dB	1.3 mm	35 µs
Ref. [3]	18.64 dB	8.72 mW@18 dB	0.3 mm	184 µs

Related Papers	Ref. [13]	Ref. [16]	Scheme 1	Scheme 2
Power consumption@20 dB	800 mW	202 mW	143 mW	264 mW
Modulation depth	42 dB	30 dB	59.08 dB	60.11 dB
Attenuation efficiency@20 dB	0.20 dB/mA	3.76 dB/mA	0.18 dB/mA	1.62 dB/mA
Modulation length	8 mm	1 mm	1.38 mm	1.38 mm
Thickness of the top silicon	3 µm	220 nm	220 nm	220 nm
Insertion loss		12.50 dB	4.54 dB	4.87 dB

Related Papers	Modulation depth	Power Consumption	Modulation Length	Response Time
Scheme 1	59.08 mW	143 mW@20 dB	1.38 mm	5.7 µs
Scheme 2	60.11 dB	264 mW@20 dB	1.38 mm	5.7 µs
Ref. [17]	50 dB		7.5 mm	5 µs
Ref. [18]	35 dB	233 mW@35 dB	1.3 mm	35 µs
Ref. [3]	18.64 dB	8.72 mW@18 dB	0.3 mm	184 µs

Abstract

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Figures (8)

Tables (2)

Equations (3)

Applied Optics