Abstract

A large lateral photovoltaic effect (LPE) with a fast optical response time is necessary to develop high-performance position-sensitive detectors. In this paper, we report an LPE with a high self-powered position sensitivity and ultrafast optical relaxation time in ${\rm{Sn}}{{\rm{S}}_2}/n {\rm{-Si}}$ junctions prepared using pulsed laser deposition. A large built-in electric field was generated at the ${\rm{Sn}}{{\rm{S}}_2}/{\rm{Si}}$ interface, which resulted in a large LPE with a positional sensitivity of up to 116 mV/mm. Furthermore, the measurement circuit with multiple parallel resistors had a strong influence on the ultrafast optical response time of the LPE and the fastest optical relaxation time observed was ${\sim}{0.44}\;\unicode{x00B5} {\rm{s}}$. Our results suggest that the ${\rm{Sn}}{{\rm{S}}_2}/{\rm{Si}}$ junction would be a promising candidate for a wide range of optoelectronic device applications.

© 2023 Optica Publishing Group

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