Design and simulation of a near-infrared enhanced Si-based SPAD for an automotive LiDAR

Sheng Xie; Xiangfa Kong; Jia Cong; Xurui Mao; Xurui Mao; Yan Fu

doi:10.1364/AO.498189

Applied Optics
Vol. 62,
Issue 28,
pp. 7380-7386
(2023)
•https://doi.org/10.1364/AO.498189

Design and simulation of a near-infrared enhanced Si-based SPAD for an automotive LiDAR

Sheng Xie, Xiangfa Kong, Jia Cong, Xurui Mao, and Yan Fu

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Sheng Xie, Xiangfa Kong, Jia Cong, Xurui Mao, and Yan Fu, "Design and simulation of a near-infrared enhanced Si-based SPAD for an automotive LiDAR," Appl. Opt. 62, 7380-7386 (2023)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: June 15, 2023
- Revised Manuscript: September 8, 2023
- Manuscript Accepted: September 10, 2023
- Published: September 21, 2023

Abstract

A near-infrared (NIR)-enhanced single-photon avalanche diode (SPAD) with a retrograded NM/XP junction for an automotive LiDAR was designed based on CSMC 0.18 µm BCD technology. A 3 µm depth NM/XP junction embedded in a lightly doped deep p-well (DP) improves the absorption efficiency in the NIR regime; the photo-generated electrons generated in the depletion region are efficiently collected into the central multiplication region by a drift process, and then the impact ionization is triggered by the strong field, resulting in a high photon detection efficiency (PDE). Additionally, the deep NM/XP junction and the buried layer effectively isolate the dark noise originating from the interface and the substrate. The SPAD was initially simulated by numerical calculation, and then was evaluated with active quench/reset electronics in a circuit simulator. The results revealed that the SPAD with an active area of ${314}\;{{\unicode{x00B5}{\rm m}}^2}$ achieves a PDE of 16.2% at 905 nm and a dark count rate (DCR) of ${1.46}\;{{\rm Hz/\unicode{x00B5}{\rm m}}^2}$, with an excess bias of 5 V at room temperature. The designed SPAD is well suited for the low-cost, miniaturized automotive LiDAR.

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Layer	Doping ( ${c m}^{- 3}$ )	Depth (µm)
$p^{+} / n^{+}$	$1 \times 10^{19}$	0.2
PW	$2.5 \times 10^{17}$	1.25
NW	$2.5 \times 10^{17}$	1.93
NM	$2 \times 10^{16}$	3
XP	$1 \times 10^{17}$	4.5
DP/DN	$1.05 \times 10^{16}$	6.59
BN	$1.1 \times 10^{17}$	7.5

Sample	Quantity	Value
$V_{b r k 0}$	Breakdown voltage at RT	38 V
$A$	Active area	$314 {µ m}^{2}$
$D$	Thickness of depletion layer	1.675 µm
$β$	Temperature coefficient of $V_{b r k}$	18.6 mV/°C
$N_{C}$	Conduction band density of states	$2.82 \times 10^{25} m^{- 3}$
$N_{V}$	Valence band density of states	$1.04 \times 10^{25} m^{- 3}$
$F$	Average electrical field in depletion region	$4.1 \sim 4.3 \times 10^{5} V / c m$
$N_{t}$	Generation/recombination center density	$9 \times 10^{17} m^{- 3}$
$τ_{01}$	Pre-exponential factor of 1th-level trap	$5.48 \times 10^{- 10} s$
$E_{a 1}$	Activation energy of 1th-level trap	0.18 eV
$τ_{02}$	Pre-exponential factor of 2th-level trap	$8.39 \times 10^{- 11} s$
$E_{a 2}$	Activation energy of 2th-level trap	0.22 eV
$τ_{03}$	Pre-exponential factor of 3th-level trap	$1.16 \times 10^{- 9} s$
$E_{a 3}$	Activation energy of 3th-level trap	0.13 eV

	Unit	Ref. [17]	Ref. [21]	Ref. [33]	Ref. [37]	This work
Technology node	µm	0.13	0.18	0.15	0.25	0.18
Active area	${µ m}^{2}$	78	78	78	314	314
Breakdown voltage	V	9.72	19.7	18.01	76.05	38
PDE at $V_{e x}$ (Peak)	-	34% at 1.7 V(450 nm)	35% at 4 V(600 nm)	31% at 5 V(450 nm)	15% at 6 V(650 nm)	44.2% at 5 V(700 nm)
PDE at 905 nm at $V_{e x}$	-	$\leq 2 % a t 1.7 V$	9.8% at 4 V	3.2% at 5 V	$\leq 4 % a t 5 V$	16.2% at 5 V
DCR density at $V_{e x}$	$H z / {µ m}^{2}$	1025 at 1.7 V	30 at 4 V	11.4 at 3 V	0.87 at 4.5 V	1.46 at 5 V
NEP at 905 nm at RT	$\times 10^{- 18} W / {H z}^{1 / 2}$	$\geq 648.339$	34.726	946.137	$\geq 17.073$	5.181

Layer	Doping ( ${c m}^{- 3}$ )	Depth (µm)
$p^{+} / n^{+}$	$1 \times 10^{19}$	0.2
PW	$2.5 \times 10^{17}$	1.25
NW	$2.5 \times 10^{17}$	1.93
NM	$2 \times 10^{16}$	3
XP	$1 \times 10^{17}$	4.5
DP/DN	$1.05 \times 10^{16}$	6.59
BN	$1.1 \times 10^{17}$	7.5

Sample	Quantity	Value
$V_{b r k 0}$	Breakdown voltage at RT	38 V
$A$	Active area	$314 {µ m}^{2}$
$D$	Thickness of depletion layer	1.675 µm
$β$	Temperature coefficient of $V_{b r k}$	18.6 mV/°C
$N_{C}$	Conduction band density of states	$2.82 \times 10^{25} m^{- 3}$
$N_{V}$	Valence band density of states	$1.04 \times 10^{25} m^{- 3}$
$F$	Average electrical field in depletion region	$4.1 \sim 4.3 \times 10^{5} V / c m$
$N_{t}$	Generation/recombination center density	$9 \times 10^{17} m^{- 3}$
$τ_{01}$	Pre-exponential factor of 1th-level trap	$5.48 \times 10^{- 10} s$
$E_{a 1}$	Activation energy of 1th-level trap	0.18 eV
$τ_{02}$	Pre-exponential factor of 2th-level trap	$8.39 \times 10^{- 11} s$
$E_{a 2}$	Activation energy of 2th-level trap	0.22 eV
$τ_{03}$	Pre-exponential factor of 3th-level trap	$1.16 \times 10^{- 9} s$
$E_{a 3}$	Activation energy of 3th-level trap	0.13 eV

Abstract

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Applied Optics