Cutting sinusoidal gratings to enhance light trapping in thin-film silicon solar cells

Ke Chen; Jinyang He; Nianhong Zheng; Sheng Wu; Hongmei Zheng

doi:10.1364/AO.476697

Applied Optics
Vol. 62,
Issue 3,
pp. 688-696
(2023)
•https://doi.org/10.1364/AO.476697

Cutting sinusoidal gratings to enhance light trapping in thin-film silicon solar cells

Ke Chen, Jinyang He, Nianhong Zheng, Sheng Wu, and Hongmei Zheng

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Ke Chen, Jinyang He, Nianhong Zheng, Sheng Wu, and Hongmei Zheng, "Cutting sinusoidal gratings to enhance light trapping in thin-film silicon solar cells," Appl. Opt. 62, 688-696 (2023)

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Abstract

A crystalline silicon thin-film solar cell with a three-layer sinusoidal grating structure is studied. The structure has a double-layer antireflection layer, and the three-layer grating is located in the double-layer antireflection layer and the passivation layer, respectively. The related parameters of the grating structure are optimized by scanning using finite-difference time-domain. The optimization results show that cutting the sinusoidal grating structure can significantly improve the light absorption efficiency of the cell for near-infrared light (750–1100 nm), and the enhancement effect is mainly in the transverse electric (TE)-polarized light. This is because the localized surface plasmon resonance and optical waveguide mode under TE-polarized light can be fully excited after the sinusoidal structure is cut. The short-circuit current density (${J_{\rm{SC}}}$) of the optimized three-layer sinusoidal grating structure is ${19.82}\;{{\rm mA/cm}^2}$, which is 112.43% higher than that of the planar structure with the same parameters and 23.18% higher than that of the uncut sinusoidal grating structure with the same parameters.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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TFSCs	$Q$ (nm)	$ω$	$W$	$i_{1}$	$i_{2}$	$J_{p h} (m A / {c m}^{2})$
P-TFSCs	–	–	–	–	–	11.12
VC-TFSCs	650	0.8	2	0.5	0.5	22.96
CC-TFSCs	600	0.9	2	0.7	0.5	22.40
VV-TFSCs	700	0.6	2	0.8	0.5	21.48
CV-TFSCs	700	0.6	2	0.8	0.5	21.46

		$p$ Region	$i$ Region	$n$ Region
Band parameters	$E_{g}$ (eV)	1.1	1.1	1.1
	$N_{c}$ , $N_{v}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$
	$ε$ , $χ$ (eV)	11.7, 4.05	11.7, 4.05	11.7, 4.05
Boltzmann constant	$K_{B}$ (J/K)	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$
Temperature	$T$ (K)	300	300	300
Mobility	$μ_{n}$ , $μ_{p}$ ( ${c m}^{2} / V \cdot s$ )	1450, 500	1450, 500	1450, 500
Doping	$N_{a}$ , $N_{d} ({c m}^{- 3})$	$1 \times 10^{20}, 0$	$1 \times 10^{12}, 0$	$1 \times 10^{20}, 0$
Auger recombination rates	$C_{n}, C_{p}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$

TFSCs	$J_{S C}$ (uncut) ( $m A / {c m}^{2}$ )	$J_{S C}$ (cut) ( $m A / {c m}^{2}$ )	$V_{O C}$ (V)	$F F$ (%)	$η$ (%)	$P_{M A X}$ ( $m W / {c m}^{2}$ )
Planar	–	9.33	0.594	83.00	4.60	4.60
VC-TFSCs	16.09	19.82	0.608	82.82	9.98	9.98
CC-TFSCs	14.54	19.35	0.606	82.98	9.73	9.73
VV-TFSCs	17.06	19.20	0.606	83.29	9.66	9.66
CV-TFSCs	16.88	19.27	0.606	83.12	9.69	9.69

TFSCs	$Q$ (nm)	$ω$	$W$	$i_{1}$	$i_{2}$	$J_{p h} (m A / {c m}^{2})$
P-TFSCs	–	–	–	–	–	11.12
VC-TFSCs	650	0.8	2	0.5	0.5	22.96
CC-TFSCs	600	0.9	2	0.7	0.5	22.40
VV-TFSCs	700	0.6	2	0.8	0.5	21.48
CV-TFSCs	700	0.6	2	0.8	0.5	21.46

		$p$ Region	$i$ Region	$n$ Region
Band parameters	$E_{g}$ (eV)	1.1	1.1	1.1
	$N_{c}$ , $N_{v}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$	$1.04 \times 10^{19}$ , $2.8 \times 10^{19}$
	$ε$ , $χ$ (eV)	11.7, 4.05	11.7, 4.05	11.7, 4.05
Boltzmann constant	$K_{B}$ (J/K)	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$
Temperature	$T$ (K)	300	300	300
Mobility	$μ_{n}$ , $μ_{p}$ ( ${c m}^{2} / V \cdot s$ )	1450, 500	1450, 500	1450, 500
Doping	$N_{a}$ , $N_{d} ({c m}^{- 3})$	$1 \times 10^{20}, 0$	$1 \times 10^{12}, 0$	$1 \times 10^{20}, 0$
Auger recombination rates	$C_{n}, C_{p}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$	$2.8 \times 10^{- 13}, 9.9 \times 10^{- 32}$

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Applied Optics