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Abstract
${\rm Sb}_2{\rm Se}_3$ is an emerging material in recent years, and past studies have shown that it has good optoelectronic properties when doped with metals. In this paper, pure ${\rm Sb}_2{\rm Se}_3$ films and ${\rm Ni} \text{-}{\rm Sb}_2{\rm Se}_3$ films with different doping contents (1, 2, 3 W) were prepared by magnetron sputtering technology. The nonlinear optics properties of the sample films were investigated using femtosecond (fs) ${ Z}$-scan technology under 800 nm. The results showed that both pure ${{\rm Sb}_2}{{\rm Se}_3}$ and doped films exhibited reverse saturated absorption (RSA), and the occurrence of the reverse saturated absorption behavior of the doped films was mainly due to two-photon absorption (TPA), free carrier absorption (FCA), and the presence of defective energy levels. Compared with pure ${{\rm Sb}_2}{{\rm Se}_3}$ films, ${\rm Ni}\text{-}{{\rm Sb}_2}{{\rm Se}_3}$ films exhibit significantly enhanced nonlinear absorption properties and nonlinear refractive properties. By increasing Ni sputtering power and incident laser energy, the nonlinear optic properties of ${\rm Ni} \text{-} {{\rm Sb}_2}{{\rm Se}_3}$ films are enhanced. By testing the sample films using SEM, XRD, and UV-Vis techniques, we found that Ni metal doping greatly improved and optimized the crystallinity of the films and adjusted the optical band gap.
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