Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect

Yong Zhang; Lei Li; Han Xie; Zhi Jiang; Yang Li; Tongtong Wang; Danyang Yao; Yan Liu; Yan Liu; Genquan Han; Genquan Han; Yue Hao

doi:10.1364/AO.477763

Applied Optics
Vol. 62,
Issue 4,
pp. 950-955
(2023)
•https://doi.org/10.1364/AO.477763

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect

Yong Zhang, Lei Li, Han Xie, Zhi Jiang, Yang Li, Tongtong Wang, Danyang Yao, Yan Liu, Genquan Han, and Yue Hao

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Yong Zhang, Lei Li, Han Xie, Zhi Jiang, Yang Li, Tongtong Wang, Danyang Yao, Yan Liu, Genquan Han, and Yue Hao, "Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect," Appl. Opt. 62, 950-955 (2023)

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Table of Contents Category
- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: October 10, 2022
- Revised Manuscript: December 23, 2022
- Manuscript Accepted: December 28, 2022
- Published: January 24, 2023

Abstract

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile. The device works on the principle that residual polarization charges of ferroelectric film, which is compatible with CMOS processes, are utilized to electrostatically dope indium tin oxide to achieve the ENZ state. Simulation results show that a significant modulation depth of 10.4 dB can be achieved for a device length of 60 µm with an energy consumption below 1 pJ.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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HZO Parameters	Value [18,31,35]
Fe thickness (nm)	10
Fe relative permittivity ( $ε_{F e}$ )	20
Domain wall density (V/m)	$8 \times 10^{7}$
Inter-domain coupling (m/F)	$8.5 \times 10^{8}$
Pinning loss (V/m)	$1.9 \times 10^{8}$
Polarization reversibility ( $c$ )	0.1
Saturation polarization ( $C / m^{2}$ )	0.38
Refractive index ( $n_{F e}$ )	1.994
Breakdown electric field (MV/cm)	4
ITO Parameters	Value [21,32,36,37]
Relative permittivity ( $ε_{r}$ )	9
Bandgap (V)	3.8
Electron affinity (V)	5
DOS, valence band ( ${c m}^{- 3}$ )	$4 \times 10^{19}$
DOS, conduction band ( ${c m}^{- 3}$ )	$5 \times 10^{18}$
Electron mobility ( ${c m}^{2} / V \cdot s$ )	40
Hole mobility ( ${c m}^{2} / V \cdot s$ )	5
Effective mass ( $m^{*}$ )	$0.35 m_{0}$
DG effective mass ( $m_{D G}^{*}$ )	$m_{0} / 3$
Refractive index ( $n_{I T O}$ )	$\sqrt{ε_{I T O}}$

Principle	Material	Energy (pJ)	$V_{w r i t i n g}$ (V)	$V_{e r a s i n g}$ (V)	Dynamic Range (dB)	Size (µm)
Floating gate [5]	Si	/	20	6	17	30 (diameter)
Floating gate [7]	Graphene	$\sim 40$	8.7	−7	$\sim 20$	328 (length)
Charge trapping [38]	${H f O}_{2}$	/	21.5	−30	12	40 (diameter)
Ferroelectric [18]	HZO	1.0–8.4	$< 4$	1.4	9.8	260 (length)
Ferroelectric (ENZ) (this work)	HZO	0.22–0.48	$< 4$	1.4	10.4	60 (length)

HZO Parameters	Value [18,31,35]
Fe thickness (nm)	10
Fe relative permittivity ( $ε_{F e}$ )	20
Domain wall density (V/m)	$8 \times 10^{7}$
Inter-domain coupling (m/F)	$8.5 \times 10^{8}$
Pinning loss (V/m)	$1.9 \times 10^{8}$
Polarization reversibility ( $c$ )	0.1
Saturation polarization ( $C / m^{2}$ )	0.38
Refractive index ( $n_{F e}$ )	1.994
Breakdown electric field (MV/cm)	4
ITO Parameters	Value [21,32,36,37]
Relative permittivity ( $ε_{r}$ )	9
Bandgap (V)	3.8
Electron affinity (V)	5
DOS, valence band ( ${c m}^{- 3}$ )	$4 \times 10^{19}$
DOS, conduction band ( ${c m}^{- 3}$ )	$5 \times 10^{18}$
Electron mobility ( ${c m}^{2} / V \cdot s$ )	40
Hole mobility ( ${c m}^{2} / V \cdot s$ )	5
Effective mass ( $m^{*}$ )	$0.35 m_{0}$
DG effective mass ( $m_{D G}^{*}$ )	$m_{0} / 3$
Refractive index ( $n_{I T O}$ )	$\sqrt{ε_{I T O}}$

Principle	Material	Energy (pJ)	$V_{w r i t i n g}$ (V)	$V_{e r a s i n g}$ (V)	Dynamic Range (dB)	Size (µm)
Floating gate [5]	Si	/	20	6	17	30 (diameter)
Floating gate [7]	Graphene	$\sim 40$	8.7	−7	$\sim 20$	328 (length)
Charge trapping [38]	${H f O}_{2}$	/	21.5	−30	12	40 (diameter)
Ferroelectric [18]	HZO	1.0–8.4	$< 4$	1.4	9.8	260 (length)
Ferroelectric (ENZ) (this work)	HZO	0.22–0.48	$< 4$	1.4	10.4	60 (length)

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Applied Optics