Abstract
The multilayer defects of mask blanks in extreme ultraviolet (EUV) lithography may cause severe reflectivity deformation and phase shift. The profile information of a multilayer defect is the key factor for mask defect compensation or repair. This paper introduces an artificial neural network framework to reconstruct the profile parameters of multilayer defects in the EUV mask blanks. With the aerial images of the defective mask blanks obtained at different illumination angles and a series of generative adversarial networks, the method enables a way of multilayer defect characterization with high accuracy.
© 2023 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Wei Cheng, Sikun Li, Xiangzhao Wang, and Zinan Zhang
Appl. Opt. 60(17) 5208-5219 (2021)
Ying Chen, Yibo Lin, Rui Chen, Lisong Dong, Ruixuan Wu, Tianyang Gai, Le Ma, Yajuan Su, and Yayi Wei
Opt. Express 28(12) 18493-18506 (2020)
Anton Barty, Stefan Hau-Riege, Dan Stearns, Miles Clift, Paul Mirkarimi, Eric Gullikson, Henry Chapman, and Don Sweeney
Appl. Opt. 43(36) 6545-6556 (2004)