Prediction and simulation of a potential barrier block in Van der Waals heterojunction photodetectors

Yangjun Liu; Haifeng Liang; Yang Li

doi:10.1364/AO.510447

Applied Optics
Vol. 63,
Issue 2,
pp. 396-405
(2024)
•https://doi.org/10.1364/AO.510447

Prediction and simulation of a potential barrier block in Van der Waals heterojunction photodetectors

Yangjun Liu, Haifeng Liang, and Yang Li

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Yangjun Liu, Haifeng Liang, and Yang Li, "Prediction and simulation of a potential barrier block in Van der Waals heterojunction photodetectors," Appl. Opt. 63, 396-405 (2024)

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Abstract

The pBp structure can effectively suppress the dark current of a photodetector by blocking the majority of carriers. However, it is a big challenge to carry out large-scale simulation optimization for two-dimensional (2D) pBp heterojunction photodetectors due to a lack of the device models. Here, a numerical simulation model of the 2D pBp heterojunction was established based on the finite element method to solve this problem. Using this model, the spatial distribution of the energy band is clarified for each layer. The concentration of nonuniformly distributed electrons, induced by the incident light and bias voltage, is obtained by solving the diffusion and drift equations. The characteristics of the photocurrent and the dark current could be presented and the quantum efficiency could be calculated by counting the ratio of the number of carriers collected at the terminals and the carriers photogenerated. The material parameters could be modified for the optimization of the simulation and prediction. In using our model, a ${\rm BP}/{\rm MoS}_2$/graphene photodetector was constructed, and the simulation results show that it works effectively under a reverse bias ranging from ${-}0.3$ to 0 V. The external quantum efficiency is 18%, while the internal efficiency approaches 85%. The doping in the barrier region definitely does not affect the dark current and the photocurrent. These results are similar to experimental results published earlier. In addition, with the BP bandgap width of 0.8 eV and incident wavelength of 1.7 µm, the dark current density predicted by the model could reach $3.3 \times {10^{- 8}}\;{{\rm A/cm}^{2}}$, which is two orders lower than the reported 2D photodetectors at room temperature. This proposed model provides a way to design 2D pBp heterojunction photodetectors.

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Name	Description
Supplement 1	Supplemental Document

Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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	AL	BL	CL
Temperature (K)	200	200	200
Material	BP	${M o S}_{2}$	Graphene
$E_{g} (e V)$	0.3	1.2	0
Electron affinity (eV)	4.3	4.4	4.5
Cutoff wavelength ( $µ m$ )	1.70	1.70	1.70
Electrical type	p	n	p
Doping ( ${c m}^{- 3}$ )	$1.31 \times 10^{18}$	$4.01 \times 10^{17}$	$3.03 \times 10^{18}$
Thickness (nm)	50	15	6
Lifetime, radiative (ps)	15
Electron mobility ( ${c m}^{2} / V s$ )	159	104
Electron diffusion length (nm)	64
$m_{e}^{*} / m_{0}$		0.49
$m_{h}^{*} / m_{0}$	0.34

Modes	Device Structures	Wavelength (nm)	Dark Current Density ( ${A / c m}^{2}$ )	Reference
PV	$B P / {M o S}_{2}$	633	$3 \times 10^{- 1}$	[34]
PV	$B P / {M o S}_{2}$	532	$2.2 \times 10^{- 5}$	[35]
PV	$B P / {M o S}_{2}$	532	$3 \times 10^{- 2}$	[36]
PC	BP	1550	$7.3 \times 10^{- 2}$	[10]
PV	${M o T e}_{2} / {M o S}_{2}$	1550	$4 \times 10^{- 4}$	[37]
nBn	${W S}_{2} / h - B N / P d S e_{2}$	520	$2.5 \times 10^{- 6}$	[22]
pBp	$B P / {M o S}_{2} /$ Graphene	1700	$3.3 \times 10^{- 8}$	This work predicted

	AL	BL	CL
Temperature (K)	200	200	200
Material	BP	${M o S}_{2}$	Graphene
$E_{g} (e V)$	0.3	1.2	0
Electron affinity (eV)	4.3	4.4	4.5
Cutoff wavelength ( $µ m$ )	1.70	1.70	1.70
Electrical type	p	n	p
Doping ( ${c m}^{- 3}$ )	$1.31 \times 10^{18}$	$4.01 \times 10^{17}$	$3.03 \times 10^{18}$
Thickness (nm)	50	15	6
Lifetime, radiative (ps)	15
Electron mobility ( ${c m}^{2} / V s$ )	159	104
Electron diffusion length (nm)	64
$m_{e}^{*} / m_{0}$		0.49
$m_{h}^{*} / m_{0}$	0.34

Modes	Device Structures	Wavelength (nm)	Dark Current Density ( ${A / c m}^{2}$ )	Reference
PV	$B P / {M o S}_{2}$	633	$3 \times 10^{- 1}$	[34]
PV	$B P / {M o S}_{2}$	532	$2.2 \times 10^{- 5}$	[35]
PV	$B P / {M o S}_{2}$	532	$3 \times 10^{- 2}$	[36]
PC	BP	1550	$7.3 \times 10^{- 2}$	[10]
PV	${M o T e}_{2} / {M o S}_{2}$	1550	$4 \times 10^{- 4}$	[37]
nBn	${W S}_{2} / h - B N / P d S e_{2}$	520	$2.5 \times 10^{- 6}$	[22]
pBp	$B P / {M o S}_{2} /$ Graphene	1700	$3.3 \times 10^{- 8}$	This work predicted

Abstract

Supplementary Material (1)

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Tables (2)

Equations (5)

Applied Optics