Abstract

To obtain diffraction-limited radiation, a GaAs injection laser of 185 μ width was operated with an external resonator. The measured far-field radiation of this laser appears to be mainly in the lowest order transverse mode over nearly the entire width of the p−n junction. The peak radiated power at room temperature is 2.2 W and the external quantum efficiency is 0.031. The external resonator of the diffraction-limited GaAs laser has spherical symmetry although the lasing junction is asymmetrical and no mode-selecting iris is included. The operation of the GaAs laser with the external resonator resulted in a radiance increase of more than one magnitude.

© 1969 Optical Society of America

Preparation and Properties of SiO Antireflection Coatings for GaAs Injection Lasers with External Resonators

H. D. Edmonds, C. DePalma, and E. P. Harris
Appl. Opt. 10(7) 1591-1596 (1971)

Diffractive Coupling from a CO₂ Laser

E. B. Treacy
Appl. Opt. 8(6) 1107-1109 (1969)

Properties of Low Order Transverse Modes in Argon Ion Lasers

R. J. Freiberg and A. S. Halsted
Appl. Opt. 8(2) 355-362 (1969)

Semiconductor Lasers

Marshall I. Nathan
Appl. Opt. 5(10) 1514-1528 (1966)

Diffraction Grating Spectroscopy

Fritz Kneubühl
Appl. Opt. 8(3) 505-519 (1969)