Xianwen Liu,1,2
Alexander W. Bruch,2
and Hong. X. Tang2,*
1Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
2Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
Xianwen Liu, Alexander W. Bruch, and Hong. X. Tang, "Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics," Adv. Opt. Photon. 15, 236-317 (2023)
The commercial success of radio-frequency acoustic filters in wireless communication systems has launched aluminum nitride (AlN) as one of the most widely used semiconductors across the globe. Over recent years, AlN has also been investigated as an attractive photonic integrated platform due to its excellent characteristics, such as enormous bandgaps (∼6.2 eV), quadratic and cubic optical nonlinearities, Pockels electro-optic effects, and compatibility with the complementary metal-oxide semiconductor technology. In parallel, AlN possesses outstanding piezoelectric and mechanical performances, which can provide new aspects for controlling phonons and photons at the wavelength scale using nanophotonic architectures. These characteristics pose AlN as a promising candidate to address the drawbacks in conventional silicon and silicon nitride platforms. In this review, we aim to present recent advances achieved in AlN photonic integrated circuits ranging from material processing and passive optical routing to active functionality implementation such as electro-optics, piezo-optomechanics, and all-optical nonlinear frequency conversion. Finally, we highlight the challenges and future prospects existing in AlN nanophotonic chips.
Di Zhu, Linbo Shao, Mengjie Yu, Rebecca Cheng, Boris Desiatov, C. J. Xin, Yaowen Hu, Jeffrey Holzgrafe, Soumya Ghosh, Amirhassan Shams-Ansari, Eric Puma, Neil Sinclair, Christian Reimer, Mian Zhang, and Marko Lončar Adv. Opt. Photon. 13(2) 242-352 (2021)
Pavel Cheben, Jens H. Schmid, Robert Halir, José Manuel Luque-González, J. Gonzalo Wangüemert-Pérez, Daniele Melati, and Carlos Alonso-Ramos Adv. Opt. Photon. 15(4) 1033-1105 (2023)
Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.
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Data are collected from literature reports at 1550 nm and room temperature unless specified.
Symbol $o/e$ indicates the ordinary/extraordinary axis.
At 1024 nm.
At 633 nm.
Data are collected from literature reports at 1550 nm and room temperature unless specified.
Symbol $o/e$ indicates the ordinary/extraordinary axis.
At 1024 nm.
At 633 nm.