Miniature light-driven nanophotonic electron acceleration and control

Roy Shiloh; Norbert Schönenberger; Norbert Schönenberger; Yuval Adiv; Yuval Adiv; Ron Ruimy; Ron Ruimy; Aviv Karnieli; Aviv Karnieli; Aviv Karnieli; Tyler Hughes; R. Joel England; Kenneth James Leedle; Dylan S. Black; Zhexin Zhao; Pietro Musumeci; Robert L. Byer; Ady Arie; Ido Kaminer; Ido Kaminer; Peter Hommelhoff; Peter Hommelhoff

doi:10.1364/AOP.461142

Advances in Optics and Photonics
Vol. 14,
Issue 4,
pp. 862-932
(2022)
•https://doi.org/10.1364/AOP.461142

Miniature light-driven nanophotonic electron acceleration and control

Roy Shiloh, Norbert Schönenberger, Yuval Adiv, Ron Ruimy, Aviv Karnieli, Tyler Hughes, R. Joel England, Kenneth James Leedle, Dylan S. Black, Zhexin Zhao, Pietro Musumeci, Robert L. Byer, Ady Arie, Ido Kaminer, and Peter Hommelhoff

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Roy Shiloh, Norbert Schönenberger, Yuval Adiv, Ron Ruimy, Aviv Karnieli, Tyler Hughes, R. Joel England, Kenneth James Leedle, Dylan S. Black, Zhexin Zhao, Pietro Musumeci, Robert L. Byer, Ady Arie, Ido Kaminer, and Peter Hommelhoff, "Miniature light-driven nanophotonic electron acceleration and control," Adv. Opt. Photon. 14, 862-932 (2022)

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- Nanophotonics, Metamaterials, and Photonic Crystals
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About this Article
History
- Original Manuscript: April 19, 2022
- Revised Manuscript: September 22, 2022
- Manuscript Accepted: September 26, 2022
- Published: December 23, 2022

Abstract

Dielectric laser accelerators (DLAs) are fundamentally based on the interaction of photons with free electrons, where energy and momentum conservation are satisfied by mediation of a nanostructure. In this scheme, the photonic nanostructure induces near-fields which transfer energy from the photon to the electron, similar to the inverse-Smith–Purcell effect described in metallic gratings. This, in turn, may provide ground-breaking applications, as it is a technology promising to miniaturize particle accelerators down to the chip scale. This fundamental interaction can also be used to study and demonstrate quantum photon-electron phenomena. The spontaneous and stimulated Smith–Purcell effect and the photon-induced near-field electron-microscopy (PINEM) effect have evolved to be a fruitful ground for observing quantum effects. In particular, the energy spectrum of the free electron has been shown to have discrete energy peaks, spaced with the interacting photon energy. This energy spectrum is correlated to the photon statistics and number of photon exchanges that took place during the interaction. We give an overview of DLA and PINEM physics with a focus on electron phase-space manipulation.

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Reference	Type of Structure	Length of Structure or Effective Interaction	Material	Electron Energy	Laser Wavelength	Average Acceleration Gradient
*Peralta et al.* (2013) [40]**	Double-sided grating	550 µm (laser spot size: 30 × 300 µm r.m.s.)	SiO₂	60 MeV	800 nm	309.8 ± 20.7 MeV/m
*Breuer et al.* (2013) [42], Breuer et al. (2014) [60]**	Single-sided grating	24.63 µm(laser spot size: 18 ± 0.8 µm)	SiO₂	27.9 keV	787 nm	25 MeV/m
*Leedle et al.* (2015) [61]**	Single-sided grating	15 µm (5.6 ± 0.5 µm interaction distance)	Si	96.3 keV	907 nm	218 ± 20 MeV/m
*Leedle et al.* (2015) [32]**	Dual pillar (symmetric)	10.5 µm (5.6 ± 0.5 µm interaction length)	Si	86.5 keV	907 nm	370 ± 40 MeV/m max196 ± 20 MeV/m channel center
*Leedle et al.* (2015) [32]**	Dual pillar (asymmetric)	10.5 µm (5.6 ± 0.5 µm interaction length)	Si	96.3 keV	870 nm	376 ± 40 MeV/m max
*McNeur et al.* (2016) [35]**	Single-sided grating	8.6 µm (effective interaction length)	SiO₂	28.4 keV15.2 keV9.6 keV	787 nm	27 MeV/m15 MeV/m7.5 MeV/m
*Wootton et al.* (2016) [41]**	Double-sided grating (illuminated from one side)	1 mm (16.3 µm interaction length)	SiO₂	60 MeV	800 nm	690 ± 100 MV/m
*Kozák et al.* (2017) [62]**	Planar boundary	23.5 µm (effective interaction length)	Ge	28.4 keV	1.93 µm	19 ± 2 MeV/m
*Kozák et al.* (2017) [62]**	Planar boundary	23.5 µm (effective interaction length)	Si	28.4 keV	1.93 µm	19 ± 2 MeV/m
*Kozák et al.* (2017) [63]**	Single-sided grating	(Not given)Two laser spots with 7 ± 1 µm (1/e²) spot size and spatial separation of 18 ± 1 µm	Si	28.1 keV	1930 nm	(Not given)
*Kozák et al.* (2017) [59]**	Single-sided few-period grating	1.86 µm (beam encompasses whole structure)	Si	30.7 keV	1800 nm	170 MeV/m
*Leedle et al.* (2018) [64]**	Dual-pillar (symmetric, illuminated from both sides)	15 µm(beam encompasses whole structure)	Si	99.0 keV	1940 nm	200 ± 8 MeV/m max133 ± 8 MeV/m channel center
*Cesar et al.* (2018) [3]**	Double-sided grating	0.5 mm, 1 mm(21.5 µm effective interaction length)	SiO₂	8 MeV	800 nm	850 MeV/m
*Cesar et al.* (2018) [46]**	Double-sided grating	0.5 mm	SiO₂	6.5 MeV	800 nm	560 MeV/m
*Yousefi et al.* (2019) [37]**	Dual pillar (symmetric, Bragg mirror on one side)	12.0 ± 0.1 µm(beam encompasses whole structure)	Si	28.4 keV	1930 nm	133 ± 9 MeV/m
*Black et al.* (2019) [8]**	Dual pillar (two stages of dual-pillar structures separated by drift space, illumination from both sides)	7.88 µm (first stage)35 µm (drift space)12.25 µm (second stage)55.1 µm (total length)(Stages illuminated separately)	Si	57 keV	1980 nm	58 ± 5 MeV/m (measured in second stage, assumed to be the same in first stage)
*Black et al.* (2019) [34]**	Dual pillar (one stage of dual-pillar structure followed by a drift space followed by an aperture)	14.18 µm (pillars)39.6 µm (drift space)(Beam encompasses whole structure)	Si	89.4 ± 0.1 keV	1.950 µm	111 ± 6 MeV/m
*Schönenberger et al.* (2019) [7]**	Dual pillar (two identical stages of dual-pillar structures, modulator and analyzer, separated by drift space)	13.2 µm (modulator)30 µm (drift space)13.2 µm (analyzer)56.4 µm (total length)(Beam encompasses whole structure)	Si	28.4 keV	1932 nm	34-60 MeV/m
*Sapra et al.* (2020) [1]**	Inverse designed structure (not directly illuminated but through a waveguide)	30 µm(40 µm beam diameter on input grating coupler)	Si	83.4 keV	1.94 µm	30.5 MeV/m
*Deng et al.* (2020) [65]**	Single-sided grating	18 µm (effective interaction length)	Sapphire	96.3 keV	2000 nm	56 ± 6 MeV/m
*Deng et al.* (2020) [65]**	Single-sided grating	23 µm (effective interaction length)	Ga₂O₃	96.3 keV	2000 nm	104 ± 4 MeV/m
*Adiv et al.* (2020) [66]**	Single-sided grating	89 µm (total length)30 µm (effective interaction length)	Si	195 keV	950 nm	67 MeV/m
*Miao et al.* (2020) [38]**	Symmetric dual pillar, illuminated from both sides	15 µm(beam encompasses whole structure)	Annealed and nitride coated Si	97 keV	1960 nm	178 ± 1.8 MeV/m
*Niedermayer et al.* (2021) [67]**	Dual pillar (two stages with drift section in between, illuminated from both sides)	31 µm (first stage)35 µm (drift section)28 µm (second stage)94 µm (total length)(Stages illuminated separately)	Si	57 keV	1980 nm	53.6 MeV/m (second stage only)
*Shiloh et al.* (2021) [33]**	Dual pillar (symmetric, Bragg mirror on both sides, illuminated from top)	25 µm(beam encompasses whole structure)	Si	28.4 keV	1.93 µm	49.2 ± 3.1 MeV/m
*Shiloh et al.* (2021) [33]**	Dual pillar (period shift of π, Bragg mirror on one side, illuminated from side)	15 µm(beam encompasses whole structure)	Si	28.4 keV	1.93 µm	68.7 ± 5.6 MeV/m
*Shiloh et al.* (2021) [6], Shiloh et al. (2022) [68]**	APF transport structure with Bragg mirror	77.7 µm(beam encompasses whole structure)	Si	28.4 keV	1933 nm	(Irrelevant)
*Chlouba et al.* (2022) [69]**	Single-sided grating	15 µm (effective interaction length)	Diamond	26.8 keV	1933 nm	59.3 ± 6 MeV/m

$q$	Electron charge
$ω$	Laser angular frequency
$k_{0}$	Laser wave vector in vacuum
$λ$	Laser wavelength
$Λ$	Grating periodicity
$β$	Normalized electron speed $v / c$
$k_{z}$	Bloch wave vector associated with grating phase advance per period
$k_{n}$	$n$ th Fourier wave vector of periodic field in grating
$Γ_{n}$	Grating fields transverse wave vector
$ϵ_{n}$	Complex field strength of $n$ th Fourier harmonic
$r_{n}$	Complex geometry factor related to transmissivity of grating in $n$ th harmonic
$α_{n}$	Phase of $n$ th harmonic relative to electron
$θ$	Relative phase of counter-propagating drive lasers

Reference	Type of Structure	Length of Structure or Effective Interaction	Material	Electron Energy	Laser Wavelength	Average Acceleration Gradient
*Peralta et al.* (2013) [40]**	Double-sided grating	550 µm (laser spot size: 30 × 300 µm r.m.s.)	SiO₂	60 MeV	800 nm	309.8 ± 20.7 MeV/m
*Breuer et al.* (2013) [42], Breuer et al. (2014) [60]**	Single-sided grating	24.63 µm(laser spot size: 18 ± 0.8 µm)	SiO₂	27.9 keV	787 nm	25 MeV/m
*Leedle et al.* (2015) [61]**	Single-sided grating	15 µm (5.6 ± 0.5 µm interaction distance)	Si	96.3 keV	907 nm	218 ± 20 MeV/m
*Leedle et al.* (2015) [32]**	Dual pillar (symmetric)	10.5 µm (5.6 ± 0.5 µm interaction length)	Si	86.5 keV	907 nm	370 ± 40 MeV/m max196 ± 20 MeV/m channel center
*Leedle et al.* (2015) [32]**	Dual pillar (asymmetric)	10.5 µm (5.6 ± 0.5 µm interaction length)	Si	96.3 keV	870 nm	376 ± 40 MeV/m max
*McNeur et al.* (2016) [35]**	Single-sided grating	8.6 µm (effective interaction length)	SiO₂	28.4 keV15.2 keV9.6 keV	787 nm	27 MeV/m15 MeV/m7.5 MeV/m
*Wootton et al.* (2016) [41]**	Double-sided grating (illuminated from one side)	1 mm (16.3 µm interaction length)	SiO₂	60 MeV	800 nm	690 ± 100 MV/m
*Kozák et al.* (2017) [62]**	Planar boundary	23.5 µm (effective interaction length)	Ge	28.4 keV	1.93 µm	19 ± 2 MeV/m
*Kozák et al.* (2017) [62]**	Planar boundary	23.5 µm (effective interaction length)	Si	28.4 keV	1.93 µm	19 ± 2 MeV/m
*Kozák et al.* (2017) [63]**	Single-sided grating	(Not given)Two laser spots with 7 ± 1 µm (1/e²) spot size and spatial separation of 18 ± 1 µm	Si	28.1 keV	1930 nm	(Not given)
*Kozák et al.* (2017) [59]**	Single-sided few-period grating	1.86 µm (beam encompasses whole structure)	Si	30.7 keV	1800 nm	170 MeV/m
*Leedle et al.* (2018) [64]**	Dual-pillar (symmetric, illuminated from both sides)	15 µm(beam encompasses whole structure)	Si	99.0 keV	1940 nm	200 ± 8 MeV/m max133 ± 8 MeV/m channel center
*Cesar et al.* (2018) [3]**	Double-sided grating	0.5 mm, 1 mm(21.5 µm effective interaction length)	SiO₂	8 MeV	800 nm	850 MeV/m
*Cesar et al.* (2018) [46]**	Double-sided grating	0.5 mm	SiO₂	6.5 MeV	800 nm	560 MeV/m
*Yousefi et al.* (2019) [37]**	Dual pillar (symmetric, Bragg mirror on one side)	12.0 ± 0.1 µm(beam encompasses whole structure)	Si	28.4 keV	1930 nm	133 ± 9 MeV/m
*Black et al.* (2019) [8]**	Dual pillar (two stages of dual-pillar structures separated by drift space, illumination from both sides)	7.88 µm (first stage)35 µm (drift space)12.25 µm (second stage)55.1 µm (total length)(Stages illuminated separately)	Si	57 keV	1980 nm	58 ± 5 MeV/m (measured in second stage, assumed to be the same in first stage)
*Black et al.* (2019) [34]**	Dual pillar (one stage of dual-pillar structure followed by a drift space followed by an aperture)	14.18 µm (pillars)39.6 µm (drift space)(Beam encompasses whole structure)	Si	89.4 ± 0.1 keV	1.950 µm	111 ± 6 MeV/m
*Schönenberger et al.* (2019) [7]**	Dual pillar (two identical stages of dual-pillar structures, modulator and analyzer, separated by drift space)	13.2 µm (modulator)30 µm (drift space)13.2 µm (analyzer)56.4 µm (total length)(Beam encompasses whole structure)	Si	28.4 keV	1932 nm	34-60 MeV/m
*Sapra et al.* (2020) [1]**	Inverse designed structure (not directly illuminated but through a waveguide)	30 µm(40 µm beam diameter on input grating coupler)	Si	83.4 keV	1.94 µm	30.5 MeV/m
*Deng et al.* (2020) [65]**	Single-sided grating	18 µm (effective interaction length)	Sapphire	96.3 keV	2000 nm	56 ± 6 MeV/m
*Deng et al.* (2020) [65]**	Single-sided grating	23 µm (effective interaction length)	Ga₂O₃	96.3 keV	2000 nm	104 ± 4 MeV/m
*Adiv et al.* (2020) [66]**	Single-sided grating	89 µm (total length)30 µm (effective interaction length)	Si	195 keV	950 nm	67 MeV/m
*Miao et al.* (2020) [38]**	Symmetric dual pillar, illuminated from both sides	15 µm(beam encompasses whole structure)	Annealed and nitride coated Si	97 keV	1960 nm	178 ± 1.8 MeV/m
*Niedermayer et al.* (2021) [67]**	Dual pillar (two stages with drift section in between, illuminated from both sides)	31 µm (first stage)35 µm (drift section)28 µm (second stage)94 µm (total length)(Stages illuminated separately)	Si	57 keV	1980 nm	53.6 MeV/m (second stage only)
*Shiloh et al.* (2021) [33]**	Dual pillar (symmetric, Bragg mirror on both sides, illuminated from top)	25 µm(beam encompasses whole structure)	Si	28.4 keV	1.93 µm	49.2 ± 3.1 MeV/m
*Shiloh et al.* (2021) [33]**	Dual pillar (period shift of π, Bragg mirror on one side, illuminated from side)	15 µm(beam encompasses whole structure)	Si	28.4 keV	1.93 µm	68.7 ± 5.6 MeV/m
*Shiloh et al.* (2021) [6], Shiloh et al. (2022) [68]**	APF transport structure with Bragg mirror	77.7 µm(beam encompasses whole structure)	Si	28.4 keV	1933 nm	(Irrelevant)
*Chlouba et al.* (2022) [69]**	Single-sided grating	15 µm (effective interaction length)	Diamond	26.8 keV	1933 nm	59.3 ± 6 MeV/m

$q$	Electron charge
$ω$	Laser angular frequency
$k_{0}$	Laser wave vector in vacuum
$λ$	Laser wavelength
$Λ$	Grating periodicity
$β$	Normalized electron speed $v / c$
$k_{z}$	Bloch wave vector associated with grating phase advance per period
$k_{n}$	$n$ th Fourier wave vector of periodic field in grating
$Γ_{n}$	Grating fields transverse wave vector
$ϵ_{n}$	Complex field strength of $n$ th Fourier harmonic
$r_{n}$	Complex geometry factor related to transmissivity of grating in $n$ th harmonic
$α_{n}$	Phase of $n$ th harmonic relative to electron
$θ$	Relative phase of counter-propagating drive lasers

Abstract

Data availability

Cited By

Figures (33)

Tables (2)

Equations (66)

Advances in Optics and Photonics