Self-assembled quantum-dot superluminescent light-emitting
diodes

Z. Y. Zhang; R. A. Hogg; X. Q. Lv; Z. G. Wang

doi:10.1364/AOP.2.000201

Advances in Optics and Photonics
Vol. 2,
Issue 2,
pp. 201-228
(2010)
•https://doi.org/10.1364/AOP.2.000201

Self-assembled quantum-dot superluminescent light-emitting diodes

Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang

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Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, "Self-assembled quantum-dot superluminescent light-emitting diodes," Adv. Opt. Photon. 2, 201-228 (2010)

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- Optoelectronics
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About this Article
History
- Original Manuscript: September 10, 2009
- Revised Manuscript: November 9, 2009
- Manuscript Accepted: November 9, 2009
- Published: January 27, 2010
Virtual Issues
Advances in Optics and Photonics (2010)

Abstract

The development of low-cost, compact, high-power and broadband superluminescent light-emitting diodes is an important research subject for a wide range of applications. We describe how self-assembled quantum-dot structures can provide an efficient means of realizing such devices utilizing a number of their unique physical properties. Such quantum dot superluminescent diodes are leading to a revolution in the development of broadband emitters for widespread medical, biological and telecommunications applications.

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Property	LD	SLED	LED
Light emission process	Stimulated emission	Amplified spontaneous emission	Spontaneous emission
Optical bandwidth	Small	Large	Large
Optical power	High	Medium	Low
Coherence length	Large	Small	Small
Device structure	Optical waveguide	Optical waveguide (inhibit optical feedback)	Waveguide structure or normal emission

QD Materials	Central Emission Wavelength $(μ m)$	CW Output Power (mW)	Bandwidth (nm)	Refs.
$In As ∕ {In}_{0.2} {Ga}_{0.8} As$ QD	1	200	60	[11]
$In As ∕ {In}_{0.15} {Ga}_{0.85} As$ dot in well	1.2	1	150	[19]
Chirped InAs/ ${In}_{0.15} {Ga}_{0.85} As$ QD	1.2	32	98	[24]
Intermixed $In As ∕ {In}_{0.2} {Ga}_{0.8} As$ QD	0.98	15	146	[26]

Property	LD	SLED	LED
Light emission process	Stimulated emission	Amplified spontaneous emission	Spontaneous emission
Optical bandwidth	Small	Large	Large
Optical power	High	Medium	Low
Coherence length	Large	Small	Small
Device structure	Optical waveguide	Optical waveguide (inhibit optical feedback)	Waveguide structure or normal emission

QD Materials	Central Emission Wavelength $(μ m)$	CW Output Power (mW)	Bandwidth (nm)	Refs.
$In As ∕ {In}_{0.2} {Ga}_{0.8} As$ QD	1	200	60	[11]
$In As ∕ {In}_{0.15} {Ga}_{0.85} As$ dot in well	1.2	1	150	[19]
Chirped InAs/ ${In}_{0.15} {Ga}_{0.85} As$ QD	1.2	32	98	[24]
Intermixed $In As ∕ {In}_{0.2} {Ga}_{0.8} As$ QD	0.98	15	146	[26]

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