Abstract
In an earlier paper, a spectroscopic technique was presented for studying the removal of negative photoresists from silicon wafers using a radiofrequency (RF) oxygen plasma. The potential application of the technique to a wide variety of manufacturing situations became quite evident especially for monitoring and controlling various stripping and etching operations induced by highly energetic plasma. It was also evident that if the technique was to enjoy wide usage in the manufacture of various integrated circuits, for example, a much more compact detection system would be necessary. Two rather versatile devices satisfying this need are described briefly here.
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